TRANS BRT PNP DUAL 50V SOT563

 

NSBA114YDXV6T1G

Manufacturer Part NumberNSBA114YDXV6T1G
DescriptionTRANS BRT PNP DUAL 50V SOT563
ManufacturerON Semiconductor
NSBA114YDXV6T1G datasheets

Availability: In stock

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

 

Specifications of NSBA114YDXV6T1G

Transistor Type2 PNP - Pre-Biased (Dual)Current - Collector (ic) (max)100mA
Voltage - Collector Emitter Breakdown (max)50VResistor - Base (r1) (ohms)10K
Resistor - Emitter Base (r2) (ohms)47KDc Current Gain (hfe) (min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic250mV @ 300µA, 10mACurrent - Collector Cutoff (max)500nA
Power - Max500mWMounting TypeSurface Mount
Package / CaseSOT-563, SOT-6Lead Free Status / RoHS StatusLead free / RoHS Compliant
Frequency - Transition-Other namesNSBA114YDXV6T1GOS
NSBA114YDXV6T1GOS
NSBA114YDXV6T1GOSTR
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
Page 1/11

Download datasheet (102Kb)Embed
Next
NSBA114EDXV6T1,
NSBA114EDXV6T5 SERIES
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBA114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low−power surface mount applications where board space is
at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are Pb−Free Devices
MAXIMUM RATINGS
(T
= 25°C unless otherwise noted, common for Q
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation @ T
= 25°C
A
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation @ T
= 25°C
A
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Junction and Storage Temperature
Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 6
and Q
)
1
2
Symbol
Value
Unit
V
−50
Vdc
CBO
V
−50
Vdc
CEO
I
−100
mAdc
C
Symbol
Max
Unit
P
357
mW
D
2.9
mW/°C
°C/W
R
350
qJA
NSBA1xxxDXV6T1
NSBA1xxxDXV6T1G SOT−563* 4000/Tape & Reel
NSBA1xxxDXV6T5
Symbol
Max
Unit
NSBA1xxxDXV6T5G SOT−563* 8000/Tape & Reel
P
500
mW
D
4.0
mW/°C
†For information on tape and reel specifications,
°C/W
including part orientation and tape sizes, please
R
250
qJA
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
°C
T
, T
−55 to
J
stg
**This package is inherently Pb−Free.
+150
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
http://onsemi.com
(3)
(2)
(1)
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)
(5)
(6)
SOT−563
CASE 463A
PLASTIC
1
STYLE 1
MARKING DIAGRAM
xx M G
G
xx = Device Code
(Refer to page 2)
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Shipping
Device
Package
SOT−563* 4000/Tape & Reel
SOT−563* 8000/Tape & Reel
DEVICE MARKING INFORMATION
Publication Order Number:
NSBA114EDXV6/D

NSBA114YDXV6T1G Summary of contents

  • Page 1

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base ...

  • Page 2

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES DEVICE MARKING AND RESISTOR VALUES Device* NSBA114EDXV6T1 / T5 NSBA124EDXV6T1 / T5 NSBA144EDXV6T1 / T5 NSBA114YDXV6T1 / T5 NSBA114TDXV6T1 / T5 (Note 2) NSBA143TDXV6T1 / T5 (Note 2) NSBA113EDXV6T1 / T5 (Note 2) NSBA123EDXV6T1 / T5 (Note ...

  • Page 3

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES ELECTRICAL CHARACTERISTICS (T Characteristic ON CHARACTERISTICS (Note 3) (continued) DC Current Gain (V = − −5.0 mA Output Voltage (on −5 −2 1.0 kW) ...

  • Page 4

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES ALL NSBA114EDXV6T1 SERIES DEVICES 300 250 200 150 100 R = 490°C/W 50 qJA 0 − AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve − ALL DEVICES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1 1000 ...

  • Page 5

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA124EDXV6T1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

  • Page 6

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144EDXV6T1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 ...

  • Page 7

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114YDXV6T1 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...

  • Page 8

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114TDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 22. DC Current Gain TYPICAL ELECTRICAL CHARACTERISTICS — NSBA143TDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 23. DC ...

  • Page 9

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA115EDXV6T1 1 0.1 −25°C 0. COLLECTOR CURRENT (mA) C Figure 24. Maximum Collector Voltage versus Collector Current 1.2 1.0 0.8 0.6 0.4 0 ...

  • Page 10

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144WDXV6T1 −25°C A 0.1 25°C 0. COLLECTOR CURRENT (mA) C Figure 29. Maximum Collector Voltage versus Collector Current 1.4 1.2 1.0 ...

  • Page 11

    ... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...