TRANS PNP GP AMP 45VCEO SMINI 3P

2SB1218AQL

Manufacturer Part Number2SB1218AQL
DescriptionTRANS PNP GP AMP 45VCEO SMINI 3P
ManufacturerPanasonic - SSG
2SB1218AQL datasheets
 

Specifications of 2SB1218AQL

Transistor TypePNPCurrent - Collector (ic) (max)100mA
Voltage - Collector Emitter Breakdown (max)45VVce Saturation (max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector Cutoff (max)100µADc Current Gain (hfe) (min) @ Ic, Vce160 @ 2mA, 10V
Power - Max150mWFrequency - Transition80MHz
Mounting TypeSurface MountPackage / CaseS-Mini3-G1 (SC 70)
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names2SB1218A-Q(TX)
2SB1218AQLTR
2SB1218AQTR
2SB1218AQTR
2SB1218AQTX
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 1/4

Download datasheet (132Kb)Embed
Next
Transistors
2SB1218A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1819A
■ Features
• High forward current transfer ratio h
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
*
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
Q
h
160 to 260
FE
Marking symbol
BQ
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
FE
= 25°C
a
Symbol
Rating
Unit
−45
V
V
CBO
−45
V
V
CEO
−7
V
V
EBO
−100
I
mA
C
−200
I
mA
CP
P
150
mW
C
°C
T
150
j
−55 to +150
°C
T
stg
= 25°C ± 3°C
a
Symbol
Conditions
= −10 µA, I
= 0
V
I
CBO
C
E
= −2 mA, I
= 0
V
I
CEO
C
B
= −10 µA, I
= 0
V
I
EBO
E
C
= −20 V, I
= 0
I
V
CBO
CB
E
= −10 V, I
= 0
I
V
CEO
CE
B
= −10 V, I
= −2 mA
h
V
FE
CE
C
= −100 mA, I
= −10 mA
V
I
CE(sat)
C
B
= −10 V, I
= 1 mA, f = 200 MHz
f
V
T
CB
E
= −10 V, I
= 0, f = 1 MHz
C
V
ob
CB
E
R
S
No-rank
210 to 340
290 to 460
160 to 460
BR
BS
SJC00071BED
Unit: mm
+0.10
+0.1
0.15
0.3
–0.05
–0.0
3
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
10°
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: B
Min
Typ
Max
−45
−45
−7
− 0.1
−100
160
460
− 0.3
− 0.5
80
2.7
B
Unit
V
V
V
µA
µA
V
MHz
pF
1