2SB1218AQL Panasonic - SSG, 2SB1218AQL Datasheet
2SB1218AQL
Manufacturer Part Number
2SB1218AQL
Description
TRANS PNP GP AMP 45VCEO SMINI 3P
Manufacturer
Panasonic - SSG
Specifications of 2SB1218AQL
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
500mV @ 10mA, 100mA
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 2mA, 10V
Power - Max
150mW
Frequency - Transition
80MHz
Mounting Type
Surface Mount
Package / Case
S-Mini3-G1 (SC 70)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SB1218A-Q(TX)
2SB1218AQLTR
2SB1218AQTR
2SB1218AQTR
2SB1218AQTX
2SB1218AQLTR
2SB1218AQTR
2SB1218AQTR
2SB1218AQTX
Transistors
2SB1218A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1819A
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
• High forward current transfer ratio h
• S-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
automatic insertion through the tape packing and the magazine
packing.
2. * : Rank classification
Product of no-rank is not classified and have no marking symbol for rank.
Marking symbol
Parameter
Rank
Parameter
h
FE
160 to 260
This product complies with the RoHS Directive (EU 2002/95/EC).
*
BQ
Q
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
FE
T
V
I
P
I
T
CBO
CEO
EBO
V
V
V
a
CP
I
I
C
stg
CE(sat)
C
C
h
210 to 340
j
CBO
CEO
f
CBO
CEO
EBO
= 25°C
FE
T
ob
BR
R
−55 to +150
Rating
I
I
I
V
V
V
I
V
V
C
C
E
C
−100
−200
−45
−45
150
150
CB
CE
CE
CB
CB
−7
= −10 µA, I
= −2 mA, I
= −10 µA, I
= −100 mA, I
SJC00071BED
= −10 V, I
= −10 V, I
= −20 V, I
= −10 V, I
= −10 V, I
290 to 460
BS
S
Conditions
Unit
mW
B
mA
mA
°C
°C
C
E
V
V
V
B
C
E
E
E
= 0
= 0
= 0
B
= 0
= 0
= −2 mA
= 1 mA, f = 200 MHz
= 0, f = 1 MHz
= −10 mA
160 to 460
No-rank
Marking Symbol: B
B
10°
0.3
(0.65) (0.65)
+0.1
–0.0
1
3
1.3
2.0
±0.1
±0.2
Min
−45
−45
160
−7
2
− 0.3
Typ
2.7
80
SMini3-G1 Package
− 0.1
−100
− 0.5
Max
460
0.15
EIAJ: SC-70
1: Base
2: Emitter
3: Collector
+0.10
–0.05
Unit: mm
MHz
Unit
µA
µA
pF
V
V
V
V
1
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