DSS4140U-7 Diodes Inc, DSS4140U-7 Datasheet - Page 2

TRANS BIPOLAR NPN 40V SOT-323

DSS4140U-7

Manufacturer Part Number
DSS4140U-7
Description
TRANS BIPOLAR NPN 40V SOT-323
Manufacturer
Diodes Inc
Datasheet

Specifications of DSS4140U-7

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 500mA, 5V
Power - Max
400mW
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DSS4140UDITR
Electrical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
DSS4140U
Document number: DS31689 Rev. 2 - 2
500
400
300
200
100
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0
R
Characteristic
θJA
25
T , AMBIENT TEMPERATURE (°C)
A
= 313°C/W
Ambient Temperature (Note 3)
Fig. 1 Power Dissipation vs.
50
75
@T
A
100
= 25°C unless otherwise specified
125
V
V
V
R
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
CE(SAT)
BE(SAT)
C
I
I
I
BE(ON)
h
CBO
CES
EBO
t
t
f
150
on
t
off
t
FE
obo
t
t
T
d
s
r
f
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2 of 5
Min
300
300
200
150
40
40
5
Typ
380
350
60
30
30
30
0.001
9
0.01
0.1
10
1
0.1
Max
100
100
100
900
200
250
500
500
1.2
1.1
50
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
vs. Collector-Emitter Voltage (Note 3)
MHz
Unit
mV
mΩ
Fig. 2 Typical Collector Current
nA
μA
nA
nA
pF
ns
ns
ns
ns
ns
ns
V
V
V
V
V
Pw = 100ms
1
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
V
V
V
V
I
C
C
E
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CB
CE
CC
= 1A, I
= 1A, I
= 1A, I
= 100μA, I
= 10mA, I
= 100μA, I
= 100mA, I
= 500mA, I
= 0.5A, I
= 5V, I
= 40V, I
= 40V, I
= 40V, V
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, f = 1.0MHz
= 10V, I
= 10V
DC
B
B
B
= 100mA
= 100mA
= 100mA
C
C
C
C
C
B1
Test Condition
B
E
E
C
= 0
E
C
= 1mA
= 500mA
= 1A
= 1A
BE
B
B
= I
= 0
= 0, T
= 0
= 50mA, f = 100MHz
10
= 0
= 0
= 1mA
= 50mA
Pw = 10ms
= 0
B2
= 25mA
A
DSS4140U
= 150°C
Pw = 1ms
© Diodes Incorporated
March 2009
100

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