DSS4160V-7 Diodes Inc, DSS4160V-7 Datasheet - Page 4

• Manufacturer Part Number: DSS4160V-7
• Description: TRANS BIPOLAR NPN 60V SOT-563
• Manufacturer: Diodes Inc

Specifications of DSS4160V-7

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V
• Power - Max: 600mW
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DSS4160VDITR

Ordering Information
Marking Information
Package Outline Dimensions
Notes:
Date Code Key
DSS4160V
Document number: DS31671 Rev. 2 - 2
Month
Code
Code
Year
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Part Number
DSS4160V-7
0.001
0.01
0.1
0.00001
Jan
K
1
1
2008
V
D = Single Pulse
D = 0.02
D = 0.01
D = 0.005
D = 0.3
D = 0.7
D = 0.5
D = 0.1
D = 0.05
Feb
0.0001
2
G
H
A
(Note 5)
D
2009
W
Mar
3
0.001
B
C
L
ZN9
Fig. 8 Transient Thermal Response (Note 3)
Apr
4
2010
0.01
X
t , PULSE DURATION TIME (s)
1
YM
www.diodes.com
May
D = 0.9
5
SOT-563
0.1
M
Case
4 of 5
2011
ZN9 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Y
Jun
6
Dim
1
A
B
C
D
G
H
K
M
L
All Dimensions in mm
Jul
0.15
1.10
1.55
0.90
1.50
0.55
0.10
0.10
7
Min
2012
-
SOT-563
Z
10
Max
0.30
1.25
1.70
1.10
1.70
0.60
0.30
0.18
Aug
-
8
P(pk)
Duty Cycle, D = t /t
T - T = P * R
0.20
1.20
1.60
0.50
1.00
1.60
0.60
0.20
0.11
100
Typ
R
J
R
2013
θJA
θ
A
JA
(t) = r(t) *
t
A
1
Sep
t
= 178°C/W
2
9
1,000
3000/Tape & Reel
θ
R
JA
θ
1 2
JA
(t)
Packaging
Oct
O
2014
B
10,000
DSS4160V
Nov
N
© Diodes Incorporated
March 2009
2015
C
Dec
D