MJD41CTF Fairchild Semiconductor, MJD41CTF Datasheet
MJD41CTF
Specifications of MJD41CTF
MJD41CTFTR
Related parts for MJD41CTF
MJD41CTF Summary of contents
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... Emitter Cut-off Current EBO Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter ON Voltage BE f Current Gain Bandwidth Product T * Pulse Test: PW 300 s, Duty Cycle 2% ©2001 Fairchild Semiconductor Corporation MJD41C 1 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition I = 30mA, I ...
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... Figure 1. DC current Gain 1000 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Capacitance 10 1 0.1 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2001 Fairchild Semiconductor Corporation 0.1 0.01 0. Figure 2. Base-Emitter Saturation Voltage 10 1 0.1 0.01 0.01 10 100 100 I ...
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... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A2, June 2001 ...
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... Package Demensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...