TRANS PNP MED PWR 12V SOT23-3

ZXTP25012EFHTA

Manufacturer Part NumberZXTP25012EFHTA
DescriptionTRANS PNP MED PWR 12V SOT23-3
ManufacturerDiodes Zetex
ZXTP25012EFHTA datasheet
 


Specifications of ZXTP25012EFHTA

Transistor TypePNPCurrent - Collector (ic) (max)4A
Voltage - Collector Emitter Breakdown (max)12VVce Saturation (max) @ Ib, Ic210mV @ 400mA, 4A
Dc Current Gain (hfe) (min) @ Ic, Vce500 @ 10mA, 2VPower - Max1.25W
Frequency - Transition310MHzMounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3Lead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-Other namesZXTP25012EFHTR
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ZXTP25012EFH
12V, SOT23, PNP medium power transistor
Summary
BV
> -12V
CEO
h
> 500
FE
I
= 4A
C(cont)
R
= 40m
CE(sat)
V
< -65mV @ 1A
CE(sat)
P
= 1.25W
D
Complementary part number ZXTN25012EFH
Description
Advanced process capability and package design have been used to
maximise the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
High power dissipation SOT23 package
High peak current
Very high gain, 500 minimum
Low saturation voltage
Applications
MOSFET and IGBT gate driving
DC - DC converters
Motor drive
High side driver
Line disconnect switch
Ordering information
Device
Reel size
(inches)
ZXTP25012EFHTA
Device marking
1E8
Issue 2 - October 2007
© Zetex Semiconductors plc 2007
Tape width
(mm)
7
8
1
B
C
Pinout - top view
Quantity
per reel
3000
www.zetex.com
C
E
E
B

ZXTP25012EFHTA Summary of contents

  • Page 1

    ... MOSFET and IGBT gate driving • converters • Motor drive • High side driver • Line disconnect switch Ordering information Device Reel size (inches) ZXTP25012EFHTA Device marking 1E8 Issue 2 - October 2007 © Zetex Semiconductors plc 2007 Tape width (mm Pinout - top view ...

  • Page 2

    Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Base current Peak pulse current Power dissipation at T =25°C amb Linear derating factor Power dissipation at T =25°C amb Linear derating factor Power dissipation at T ...

  • Page 3

    Characteristics Issue 2 - October 2007 © Zetex Semiconductors plc 2007 ZXTP25012EFH 3 www.zetex.com ...

  • Page 4

    Electrical characteristics (at T Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Collector-base cut-off current Emitter-base cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter turn-on voltage V Static forward current transfer ratio Transition frequency Output ...

  • Page 5

    Typical characteristics Issue 2 - October 2007 © Zetex Semiconductors plc 2007 ZXTP25012EFH 5 www.zetex.com ...

  • Page 6

    Package outline - SOT23 leads Dim. Millimeters Min. Max 1.12 A1 0.01 0.10 b 0.30 0.50 C 0.085 0.120 D 2.80 3.04 e 0.95 NOM Note: Controlling dimensions are in millimeters. ...

  • Page 7

    Issue 2 - October 2007 © Zetex Semiconductors plc 2007 Intentionally left blank 7 ZXTP25012EFH www.zetex.com ...

  • Page 8

    Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...