ZXTP25012EFHTA Diodes Zetex, ZXTP25012EFHTA Datasheet

TRANS PNP MED PWR 12V SOT23-3

ZXTP25012EFHTA

Manufacturer Part Number
ZXTP25012EFHTA
Description
TRANS PNP MED PWR 12V SOT23-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXTP25012EFHTA

Transistor Type
PNP
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
210mV @ 400mA, 4A
Dc Current Gain (hfe) (min) @ Ic, Vce
500 @ 10mA, 2V
Power - Max
1.25W
Frequency - Transition
310MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
ZXTP25012EFHTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXTP25012EFHTA
Manufacturer:
DIODES
Quantity:
2 500
Part Number:
ZXTP25012EFHTA
Manufacturer:
DIODES/美台
Quantity:
20 000
ZXTP25012EFH
12V, SOT23, PNP medium power transistor
Summary
BV
h
I
R
V
P
Complementary part number ZXTN25012EFH
Description
Advanced process capability and package design have been used to
maximise the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
Applications
Ordering information
Device marking
1E8
Issue 2 - October 2007
© Zetex Semiconductors plc 2007
C(cont)
Device
ZXTP25012EFHTA
FE
D
CE(sat)
CE(sat)
CEO
High power dissipation SOT23 package
High peak current
Very high gain, 500 minimum
Low saturation voltage
MOSFET and IGBT gate driving
DC - DC converters
Motor drive
High side driver
Line disconnect switch
= 1.25W
> 500
> -12V
= 4A
= 40m
< -65mV @ 1A
Reel size
(inches)
7
Tape width
(mm)
8
1
Quantity
per reel
3000
C
Pinout - top view
B
www.zetex.com
C
E
B
E

Related parts for ZXTP25012EFHTA

ZXTP25012EFHTA Summary of contents

Page 1

... MOSFET and IGBT gate driving • converters • Motor drive • High side driver • Line disconnect switch Ordering information Device Reel size (inches) ZXTP25012EFHTA Device marking 1E8 Issue 2 - October 2007 © Zetex Semiconductors plc 2007 Tape width (mm Pinout - top view ...

Page 2

Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Base current Peak pulse current Power dissipation at T =25°C amb Linear derating factor Power dissipation at T =25°C amb Linear derating factor Power dissipation at T ...

Page 3

Characteristics Issue 2 - October 2007 © Zetex Semiconductors plc 2007 ZXTP25012EFH 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Collector-base cut-off current Emitter-base cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter turn-on voltage V Static forward current transfer ratio Transition frequency Output ...

Page 5

Typical characteristics Issue 2 - October 2007 © Zetex Semiconductors plc 2007 ZXTP25012EFH 5 www.zetex.com ...

Page 6

Package outline - SOT23 leads Dim. Millimeters Min. Max 1.12 A1 0.01 0.10 b 0.30 0.50 C 0.085 0.120 D 2.80 3.04 e 0.95 NOM Note: Controlling dimensions are in millimeters. ...

Page 7

Issue 2 - October 2007 © Zetex Semiconductors plc 2007 Intentionally left blank 7 ZXTP25012EFH www.zetex.com ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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