ZXTP25012EFHTA Diodes Zetex, ZXTP25012EFHTA Datasheet - Page 2

• Manufacturer Part Number: ZXTP25012EFHTA
• Description: TRANS PNP MED PWR 12V SOT23-3
• Manufacturer: Diodes Zetex

Specifications of ZXTP25012EFHTA

• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 12V
• Vce Saturation (max) @ Ib, Ic: 210mV @ 400mA, 4A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 10mA, 2V
• Power - Max: 1.25W
• Frequency - Transition: 310MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: ZXTP25012EFHTR

Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs
Issue 2 - October 2007
© Zetex Semiconductors plc 2007
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Base current
Peak pulse current
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
still air conditions.
(a)
(b)
(c)
(d)
amb
amb
amb
amb
=25°C
=25°C
=25°C
=25°C
(b)
(a)
(b)
(c)
(d)
2
Symbol
Symbol
T
V
V
V
R
R
R
R
j
I
, T
P
P
P
P
CBO
CEO
EBO
CM
I
I
C
B
D
D
D
D
JA
JA
JA
JA
stg
ZXTP25012EFH
-55 to 150
Limit
Limit
5.84
1.05
1.25
1.81
14.5
0.73
171
119
100
-12
-12
-10
8.4
9.6
69
-4
-1
-7
www.zetex.com
mW/°C
mW/°C
mW/°C
mW/°C
°C/W
°C/W
°C/W
°C/W
Unit
Unit
W
W
W
W
°C
A
A
A
V
V
V