ZXTP2006E6TA Diodes Zetex, ZXTP2006E6TA Datasheet - Page 4

• Manufacturer Part Number: ZXTP2006E6TA
• Description: TRANS PNP LO SAT 20V SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXTP2006E6TA

• Transistor Type: PNP
• Current - Collector (ic) (max): 3.5A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 130mV @ 350mA, 3.5A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 1.1W
• Frequency - Transition: 110MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXTP2006E6TR

ELECTRICAL CHARACTERISTICS (at T
NOTES
* Measured under pulsed conditions. Pulse width
ZXTP2006E6
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
300 s; duty cycle
SYMBOL
BV
BV
BV
I
I
I
V
V
V
h
f
C
CBO
CES
EBO
T
FE
CE(SAT)
BE(SAT)
BE(ON)
OBO
CBO
CEO
EBO
amb
= 25°C unless otherwise stated)
MIN.
4
2%.
-7.5
300
300
150
-25
-20
10
-0.96
TYP.
-100
-110
-8.4
-0.8
575
450
285
110
-49
-43
-10
40
45
MAX. UNIT CONDITIONS
-100
-100
-100
-140
-130
-1.1
-0.9
900
-15
mV
mV
mV
nA
nA
nA
pF
V
V
V
V
V
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
f = 50MHz
V
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
CB
= -100 A
= -3.5A, I
= -3.5A, I
= -100 A
= -10mA *
= -0.1A, I
= -1A, I
= -3.5A, V
= -10mA, V
= -1A, V
= -3.5A, V
= -10A, V
= -50mA, V
= -20V
= -20V
= -6V
= -10V, f = 1MHz *
ISSUE 1 - JUNE 2005
B
CE
B
B
B
= -10mA*
CE
CE
CE
= -350mA*
= -350mA*
= -10mA*
= -2V *
CE
CE
= -2V *
= -2V *
= -2V *
= -2V *
= -10V