FZT1151ATA Diodes Zetex, FZT1151ATA Datasheet

FZT1151ATA

Manufacturer Part Number

FZT1151ATA

Description

TRANS PNP -40V -3000MA SOT-223

Manufacturer

Diodes Zetex

Datasheet

1.FZT1151ATA.pdf (4 pages)

Specifications of FZT1151ATA

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

40V

Vce Saturation (max) @ Ib, Ic

300mV @ 250mA, 3A

Current - Collector Cutoff (max)

100nA

Dc Current Gain (hfe) (min) @ Ic, Vce

250 @ 500mA, 2V

Power - Max

2.5W

Frequency - Transition

145MHz

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Transistor Polarity

PNP

Number Of Elements

Collector-emitter Voltage

40V

Collector-base Voltage

45V

Emitter-base Voltage

Collector Current (dc) (max)

Dc Current Gain (min)

270

Power Dissipation

2.5W

Frequency (max)

145MHz

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

3 +Tab

Package Type

SOT-223

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FZT1151ATR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

FZT1151ATA

Manufacturer:

DIODES/美台

Quantity:

20 000

Current page: 1 of 4
Download datasheet (103Kb)

PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 1 - JANUARY 1997

FEATURES

ABSOLUTE MAXIMUM RATINGS.

† The power which can be dissipated assuming the device is mounted in a typical manner on

a P.C.B. with copper equal to 2 inches x 2 inches

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

Operating and Storage Temperature

Range

3 Amp Continuous Current

5 Amp Pulse Current

Low saturation Voltage

High Gain

CEO

= -40V

amb

=25°C †

SYMBOL

tot

CBO

CEO

EBO

stg

-55 to +150

VALUE

-500

-45

-40

2.5

-5

-3

FZT1151A

C C

SOT223

UNIT

°C

Related parts for FZT1151ATA

FZT1151ATA Summary of contents

Page 1

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * V = -40V CEO * 3 Amp Continuous Current * 5 Amp Pulse Current * Low saturation Voltage * High Gain ABSOLUTE MAXIMUM RATINGS. PARAMETER ...

Page 2

FZT1151A ELECTRICAL CHARACTERISTICS (at T PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current I Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On ...

Page 3

TYPICAL CHARACTERISTICS 1.0 +25°C 0.8 0.6 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 0.4 0 10m 100m I - Collector Current ( CE(sat) C 750 500 250 +100°C +25°C -55° 100m 10m I - Collector ...

Page 4

FZT1151A D= 100µs 1ms 10ms 100ms Pulse Width Transient Thermal Resistance SPICE PARAMETERS *ZETEX FZT1151A Spice model Last revision 12/12/96 * .MODEL FZT1151A PNP IS =1.7e-12 NF =1.004 ...

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