ZXTP2008ZTA Diodes Zetex, ZXTP2008ZTA Datasheet - Page 4

TRANS PNP LO SAT 30V 5.5A SOT89

ZXTP2008ZTA

Manufacturer Part Number
ZXTP2008ZTA
Description
TRANS PNP LO SAT 30V 5.5A SOT89
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXTP2008ZTA

Transistor Type
PNP
Current - Collector (ic) (max)
5.5A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
175mV @ 500mA, 5.5A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1A, 1V
Power - Max
2.1W
Frequency - Transition
110MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
ZXTP2008ZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXTP2008ZTA
Quantity:
7 000
ELECTRICAL CHARACTERISTICS (at T
NOTES
* Measured under pulsed conditions. Pulse width
ZXTP2008Z
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage BV
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
SYMBOL
BV
BV
I
I
R <1k
I
V
V
V
h
f
C
t
t
300 s; duty cycle
CBO
CER
EBO
T
ON
OFF
FE
CE(SAT)
BE(SAT)
BE(ON)
OBO
CBO
CER
CEO
EBO
amb
= 25°C unless otherwise stated)
MIN.
-7.0
100
100
-50
-50
-30
70
10
4
2%.
-860
TYP.
-130
-970
-8.0
225
200
145
110
230
-70
-70
-40
<-1
<-1
<-1
-25
-35
-55
-55
20
83
43
MAX.
-1070
-175
-960
-0.5
-0.5
300
-20
-20
-10
-40
-55
-80
-80
UNIT CONDITIONS
MHz
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
V
V
V
V
A
A
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f = 50MHz
V
I
I
C
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CB
= -100 A
= -5.5A, I
= -10mA, V
= -1A, V
= -100 A
= -1 A, RB <1k
= -10mA *
= -0.5A, I
= -1A, I
= -1A, I
= -2A, I
= -5.5A, I
= -5.5A, V
= -5A, V
= -20A, V
= -100mA, V
= -1A, V
= -I
= -6V
= -40V
= -40V,T
= -40V
= -40V,T
= -10V, f = 1MHz *
B2
ISSUE 1 - JUNE 2005
= -100mA
B
B
B
CE
CE
CC
B
= -100mA *
B
= -20mA *
= -200mA *
B
CE
CE
= -500mA *
amb
amb
= -1V *
= -1V *
= -20mA *
=-500mA *
= -10V,
CE
= -1V *
CE
= -1V *
= -1V *
=100°C
=100°C
= -10V

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