ZXTP2009ZTA Diodes Zetex, ZXTP2009ZTA Datasheet - Page 4

• Manufacturer Part Number: ZXTP2009ZTA
• Description: TRANS PNP LO SAT 40V 5.5A SOT89
• Manufacturer: Diodes Zetex

Specifications of ZXTP2009ZTA

• Transistor Type: PNP
• Current - Collector (ic) (max): 5.5A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 185mV @ 550mA, 5.5A
• Current - Collector Cutoff (max): 20nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 2V
• Power - Max: 2.1W
• Frequency - Transition: 152MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXTP2009ZTR

ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width
ZXTP2009Z
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
Switching times
S E M I C O N D U C T O R S
SYMBOL
BV
BV
BV
BV
I
I
I
V
V
V
H
f
C
t
t
t
t
t
t
t
t
CBO
CES
EBO
T
d
r
s
r
d
r
s
r
amb
CE(SAT)
BE(SAT)
BE(ON)
OBO
FE
CBO
CES
CEO
EBO
300 s; duty cycle
= 25°C unless otherwise stated)
4
MIN.
-7.5
200
200
170
110
-50
-50
-40
-1000
-820
-869
-778
TYP.
-8.3
-120
-125
-130
-162
390
152
350
290
175
325
107
264
103
-90
-90
-58
-15
-44
-50
-70
53
18
55
17
60
1
1
1
2%.
MAX. UNIT CONDITIONS
-1075
-900
-850
-165
-175
-175
-185
-950
-20
-20
-20
-30
550
-60
-70
-80
MHz I
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
ns
V
V
V
V
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
I
I
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
C
B1
CB
CB
EB
CB
=-1A, I
=-1A, I
=-1A, I
=-2A, I
=-2A, I
=-3.5A, I
=-5.5A, I
=-5.5A, I
=-5.5A, V
=-0.5A, V
=-2A, V
=-5.5A, V
=-100 A
=-100 A
=-10mA*
=-100 A
=-0.1A, I
=-2A, I
=-2A, V
=-10mA, V
=-50mA, V
=-1A, V
=-2A, V
=I
=I
=-6V
=-40V
=-32V
=-10V, f=1MHz*
ISSUE 1 - JUNE 2005
B2
B2
=-100mA
=-20mA
B
B
B
B
B
CE
B
=-100mA*
=-50mA*
=-10mA*
=-200mA*
=-40mA*
B
B
B
CE
CC
CC
=-40mA*
CE
CE
CE
B
=-175mA*
=-550mA*
=-550mA*
=-2V*
=-10mA*
=-2V*
=-10V,
=-30V,
=-2V*
=-2V*
=-2V*
CE
CE
=-10V
=-2V*