ZXTP2012GTA Diodes Zetex, ZXTP2012GTA Datasheet - Page 2

• Manufacturer Part Number: ZXTP2012GTA
• Description: TRANS PNP LO SAT 60V 5.5A SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXTP2012GTA

• Transistor Type: PNP
• Current - Collector (ic) (max): 5.5A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 500mA, 5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 1V
• Power - Max: 3W
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 7V
• Collector Current (dc) (max): 5.5A
• Dc Current Gain (min): 100
• Power Dissipation: 3W
• Frequency (max): 120MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: ZXTP2012GTR

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ZXTP2012G
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
PARAMETER
Junction to ambient
S E M I C O N D U C T O R S
(a)
A
A
=25°C
=25°C
(a)
(b)
SYMBOL
R
2
SYMBOL
BV
BV
BV
I
I
P
P
T
JA
C
CM
D
D
j
, T
CBO
CEO
EBO
stg
-55 to +150
VALUE
42
LIMIT
-100
12.8
-5.5
-60
-15
3.0
1.6
24
-7
ISSUE 1 - JUNE 2005
mW/°C
mW/°C
UNIT
°C/W
UNIT
°C
W
W
V
V
V
A
A