ZXTP2012GTA Diodes Zetex, ZXTP2012GTA Datasheet - Page 4
ZXTP2012GTA
Manufacturer Part Number
ZXTP2012GTA
Description
TRANS PNP LO SAT 60V 5.5A SOT223
Manufacturer
Diodes Zetex
Datasheet
1.ZXTP2012GTA.pdf
(6 pages)
Specifications of ZXTP2012GTA
Transistor Type
PNP
Current - Collector (ic) (max)
5.5A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
250mV @ 500mA, 5A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 2A, 1V
Power - Max
3W
Frequency - Transition
120MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage
100V
Emitter-base Voltage
7V
Collector Current (dc) (max)
5.5A
Dc Current Gain (min)
100
Power Dissipation
3W
Frequency (max)
120MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
ZXTP2012GTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXTP2012GTA
Manufacturer:
DIODES/美台
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width
ZXTP2012G
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
S E M I C O N D U C T O R S
SYMBOL
BV
BV
BV
BV
I
I
R
I
V
V
V
H
f
C
t
t
CBO
CER
EBO
T
ON
OFF
CE(SAT)
BE(SAT)
BE(ON)
OBO
FE
amb
CBO
CER
CEO
EBO
1k
300 s; duty cycle
= 25°C unless otherwise stated)
4
MIN.
-100
-100
100
-60
100
45
10
-7
-1030
-120
-120
-920
TYP.
-8.1
-195
250
120
200
370
-80
-15
-55
-90
48
39
90
25
1
1
1
2%.
-1150
-1020
MAX. UNIT CONDITIONS
-0.5
-120
-250
-0.5
-20
-20
-10
-25
300
-70
MHz I
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
V
V
V
V
A
A
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CB
=-1A, I
=-2A, I
=-5A, I
=-2A, V
=-5A, V
=-10A, V
=-100 A
=-1 A, RB 1k
=-10mA*
=-100 A
=-0.1A, I
=-5A, I
=-5A, V
=-10mA, V
=-100mA, V
=1A, V
=I
=-80V,T
=-80V,T
=-6V
=-80V
=-80V
=-10V, f=1MHz*
ISSUE 1 - JUNE 2005
B2
=100mA
B
B
B
CE
CE
B
CC
=-100mA*
=-200mA*
=-500mA*
CE
CE
=-500mA*
amb
amb
B
=-1V*
=-1V*
=10V,
=-10mA*
=-1V*
=-1V*
CE
CE
=100 C
=100 C
=-1V*
=-10V