MPSA43 Fairchild Semiconductor, MPSA43 Datasheet

TRANS AMP NPN 200V 200MA TO-92

MPSA43

Manufacturer Part Number
MPSA43
Description
TRANS AMP NPN 200V 200MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MPSA43

Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
200V
Vce Saturation (max) @ Ib, Ic
400mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 30mA, 10V
Power - Max
625mW
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
200 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
625 mW
Dc Collector/base Gain Hfe Min
50
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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©2002 Fairchild Semiconductor Corporation
NPN High Voltage Amplifier
• This device is designed for application as a video output to drive color
• Sourced from process 48.
• See MPSA42 for characteristics.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics *
h
V
V
Small Signal Characteristics *
f
C
P
R
R
C
CBO
EBO
T
Symbol
CRT and other high voltage applications.
FE
J
CES
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE
BE
D
cb
Symbol
, T
JC
JA
Symbol
(sat)
(sat)
STG
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Dandwidth Product
Collector-Base Capacitance
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
T
A
T
Parameter
=25 C unless otherwise noted
A
=25 C unless otherwise noted
T
Parameter
A
=25 C unless otherwise noted
- Continuous
MPSA43
I
I
I
V
V
I
I
I
I
I
I
V
C
C
C
C
C
C
C
C
C
CB
EB
CB
= 1.0mA, I
= 100 A, I
= 100 A, I
= 1.0mA, V
= 10mA, V
= 30mA, V
= 20mA, I
= 20mA, I
= 10mA, V
= 160V, I
= 4.0V, I
= 20V, I
Test Condition
E
B
B
C
B
E
C
CE
CE
CE
E
CE
= 2.0mA
= 2.0mA
= 0, f = 1.0MHz
= 0
= 0
= 0
= 0
= 0
= 10V
= 10V
= 20V, f = 100MHz
= 10V
-55 ~ +150
1. Emitter 2. Base 3. Collector
Value
1
200
200
200
6.0
Min.
200
200
6.0
Max.
25
40
50
50
83.3
625
200
5.0
TO-92
Max.
200
0.1
0.1
0.4
0.9
4.0
Rev. B, November 2002
Units
mW/ C
mA
Units
V
V
V
mW
C/W
C/W
C
Units
MHz
pF
V
V
V
V
V
A
A

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MPSA43 Summary of contents

Page 1

... Pulse Test: Pulse Width 300 s, Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation MPSA43 T =25 C unless otherwise noted A Parameter - Continuous T =25 C unless otherwise noted A Test Condition I = 1.0mA ...

Page 2

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B, November 2002 ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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