MPSA13 Fairchild Semiconductor, MPSA13 Datasheet

TRANSISTOR NPN SS DARL 5K TO-92

MPSA13

Manufacturer Part Number
MPSA13
Description
TRANSISTOR NPN SS DARL 5K TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MPSA13

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1.2A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
625mW
Frequency - Transition
125MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
30 V
Maximum Dc Collector Current
1.2 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
5000
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
ECG172A
MPS-13

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©2007 Fairchild Semiconductor Corporation
MPSA13 Rev. A
MPSA13
NPN Darlington Transistor
• This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A.
• Sourced from process 05.
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
V
V
V
I
T
Off Characteristics
V
I
I
On Characteristics *
h
V
V
Small Signal Characteristics
f
C
Symbol
CBO
EBO
T
J
FE
CES
CBO
EBO
(BR)CES
CE (sat)
BE (on)
, T
Symbol
STG
Collector-Emitter Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Parameter
T
- Continuous
a
=25°C unless otherwise noted
Parameter
T
a
= 25°C unless otherwise noted
1. Emitter 2. Base 3. Collector
1
I
V
V
V
V
I
I
I
C
C
C
C
CB
EB
CE
CE
= 100μA, I
= 100mA, I
= 100mA,V
= 10mA, V
= 30V, I
= 10V, I
= 5.0V, I
= 5.0, I
1
TO-92
Test Condition
C
E
C
B
C
CE
= 100mA
B
CE
= 0
= 0
= 0
=10mA
= 0.1mA
= 10V, f = 100MHz
= 5.0V
-55 to +150
Value
1.2
30
30
10
10,000
Min.
5,000
125
30
Max.
100
100
1.5
2.0
www.fairchildsemi.com
Units
July 2007
°C
V
V
V
A
Units
nA
nA
pF
V
V
V

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MPSA13 Summary of contents

Page 1

... CE (sat) V Base-Emitter On Voltage BE (on) Small Signal Characteristics f Current Gain Bandwidth Product T * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% ©2007 Fairchild Semiconductor Corporation MPSA13 Rev. A TO- Emitter 2. Base 3. Collector T = 25°C unless otherwise noted a Parameter - Continuous T =25°C unless otherwise noted ...

Page 2

... Total Device Dissipation D Derate above 25°C R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA * Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”. Typical Characteristics MPSA13 Rev =25°C unless otherwise noted a Parameter 2 Max. Units 625 mW 5.0 mW/°C ° ...

Page 3

... Typical Characteristics MPSA13 Rev. A (continued) 3 www.fairchildsemi.com ...

Page 4

... Mechanical Dimensions 0.46 ±0.10 1.27TYP ±0.20 [1.27 MPSA13 Rev. A TO-92 +0.25 4.58 –0.15 1.27TYP ±0.20 ] [1.27 ] ±0.20 3.60 (R2.29) 4 +0.10 0.38 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...

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