2SC2258 | |
|---|---|
| Manufacturer Part Number | 2SC2258 |
| Description | TRANS NPN HF 250VCEO .1A TO-126 |
| Manufacturer | Panasonic - SSG |
| 2SC2258 datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
×
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Specifications of 2SC2258 | |||
|---|---|---|---|
| Transistor Type | NPN | Current - Collector (ic) (max) | 100mA |
| Voltage - Collector Emitter Breakdown (max) | 250V | Vce Saturation (max) @ Ib, Ic | 1.2V @ 5mA, 50mA |
| Dc Current Gain (hfe) (min) @ Ic, Vce | 40 @ 40mA, 20V | Power - Max | 4W |
| Frequency - Transition | 100MHz | Mounting Type | Through Hole |
| Package / Case | TO-126-3 | Lead Free Status / RoHS Status | Request inventory verification / Request inventory verification |
| Current - Collector Cutoff (max) | - | ||
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2
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PrevNext
Power Transistors
2SC2258
Silicon NPN triple diffusion planar type
For high breakdown voltage general amplification
■ Features
• High collector-emitter voltage (Base open) V
• High transition frequency f
T
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Note) * 1: Without heat sink
* 2 :With a 100 × 100 × 2 mm Al heat sink
■ Electrical Characteristics T
Parameter
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-emitter cutoff current
(Resistor between B and E)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
CEO
= 25°C
a
Symbol
Rating
Unit
V
250
V
CBO
V
250
V
CEO
V
7
V
EBO
I
100
mA
C
I
150
mA
CP
* 1
P
1.2
W
C
* 2
4
°C
T
150
j
−55 to +150
°C
T
stg
= 25°C ± 3°C
a
Symbol
Conditions
= 0.1 mA, I
= 0
V
I
EBO
E
C
= 20 V, I
= 40 mA
V
V
BE
CE
C
= 250 V, R
= 100 kΩ
I
V
CER
CE
BE
= 20 V, I
= 40 mA
h
V
FE1
CE
C
= 50 V, I
= 5 mA
h
V
FE2
CE
C
= 50 mA, I
= 5 mA
V
I
CE(sat)
C
B
= 10 V, I
= −10 mA, f = 200 MHz
f
V
T
CB
E
= 50 V, I
= 0, f = 1 MHz
C
V
ob
CB
E
SJD00098BED
Unit: mm
+0.5
8.0
–0.1
3.2
φ 3.16
±0.1
0.75
±0.1
0.5
±0.1
0.5
±0.1
1.76
4.6
±0.2
2.3
±0.2
1: Emitter
1
2
3
2: Collector
3: Base
TO-126B-A1 Package
Min
Typ
Max
Unit
7
1.2
µA
100
40
30
1.2
100
MHz
3.0
4.5
pF
±0.2
±0.1
V
V
V
1
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2SC2258 Summary of contents |
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