PMBTA92,215 NXP Semiconductors, PMBTA92,215 Datasheet

TRANS PNP HV 100MA 300V SOT23

PMBTA92,215

Manufacturer Part Number
PMBTA92,215
Description
TRANS PNP HV 100MA 300V SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBTA92,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 30mA, 10V
Power - Max
250mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
250 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1748-2
933776100215
PMBTA92 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMBTA92,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Product data sheet
Supersedes data of 1999 Apr 13
DATA SHEET
PMBTA92
PNP high-voltage transistor
DISCRETE SEMICONDUCTORS
2004 Jan 22

Related parts for PMBTA92,215

PMBTA92,215 Summary of contents

Page 1

DATA SHEET PMBTA92 PNP high-voltage transistor Product data sheet Supersedes data of 1999 Apr 13 DISCRETE SEMICONDUCTORS 2004 Jan 22 ...

Page 2

... NXP Semiconductors PNP high-voltage transistor FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony • Professional communication equipment. DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: PMBTA42. MARKING TYPE NUMBER PMBTA92 Note Made in Hong Kong. ...

Page 3

... NXP Semiconductors PNP high-voltage transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE V collector-emitter saturation voltage ...

Page 4

... NXP Semiconductors PNP high-voltage transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...

Page 5

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 6

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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