2PB709ASL,215 NXP Semiconductors, 2PB709ASL,215 Datasheet - Page 3

• Manufacturer Part Number: 2PB709ASL,215
• Description: TRANSISTOR PNP 45V 100MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of 2PB709ASL,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 290 @ 2mA, 10V
• Power - Max: 250mW
• Frequency - Transition: 80MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 70 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2PB709ASL T/R; 568-4658-2; 934062299215

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
7. Characteristics
2PB709AXL_1
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 7.
[1]
Table 8.
T
Symbol
V
V
V
I
I
I
P
T
T
T
Symbol
R
Symbol
I
I
h
V
C
CM
BM
CBO
EBO
amb
FE
j
amb
stg
CBO
CEO
EBO
tot
CEsat
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
= 25 C unless otherwise specified.
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from junction
to ambient
Limiting values
Thermal characteristics
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
h
h
FE
FE
group R
group S
Rev. 01 — 12 November 2008
Conditions
V
V
T
V
V
I
I
C
B
2PB709ARL; 2PB709ASL
j
CB
CB
EB
CE
= 150 C
= 10 mA
= 100 mA;
= 5 V; I
= 45 V; I
= 45 V; I
= 10 V; I
45 V, 100 mA PNP general-purpose transistors
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
Conditions
in free air
p
p
amb
1 ms
1 ms
C
E
E
C
= 0 A
25 C
= 0 A
= 0 A;
= 2 mA
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
Min
-
Min
-
-
-
210
290
-
55
65
Typ
-
Typ
-
-
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
250
150
+150
+150
45
45
6
100
200
100
Max
500
Max
340
460
10
5
10
500
Unit
V
V
V
mA
mA
mA
mW
C
C
C
Unit
K/W
Unit
nA
nA
mV
A
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