2SC2411KT146Q Rohm Semiconductor, 2SC2411KT146Q Datasheet

TRANS NPN 32V 0.5A SOT-346

2SC2411KT146Q

Manufacturer Part Number
2SC2411KT146Q
Description
TRANS NPN 32V 0.5A SOT-346
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SC2411KT146Q

Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
600mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 3V
Power - Max
200mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
2SC2411KT146Q
2SC2411KT146QTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC2411KT146Q
Manufacturer:
ROHM
Quantity:
2 786
Part Number:
2SC2411KT146Q
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Medium Power Transistor (32V, 0.5A)
2SC2411K
1) High I
2) Low V
3) Complements the 2SA1036K.
Epitaxial planar type
NPN silicon transistor
*
Features
Structure
Absolute maximum ratings (Ta = 25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
P
I
Optimal for low voltage operation.
CMax
C
must not be exceeded.
. = 0.5A
CMax
CE(sat)
Parameter
.
.
Symbol
V
V
V
Tstg
P
CBO
CEO
I
Tj
EBO
C
C
−55 to +150
∗ Denotes h
Limits
External dimensions (Units : mm)
150
0.2
0.5
40
32
2SC2411K
5
ROHM : SMT3
EIAJ : SC-59
(1)
0.95 0.95
2.9±0.2
1.9±0.2
FE
Abbreviated symbol : C∗
(2)
(3)
0.4
All terminals have same dimensions
+0.1
−0.05
Unit
°C
°C
W
V
V
V
A
(1) Emitter
(2) Base
(3) Collector
*
0.15
−0.06
+0.1
1.1
0.8±0.1
+0.2
−0.1
0 ∼ 0.1
Rev.A
2SC2411K
1/3

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2SC2411KT146Q Summary of contents

Page 1

Transistors Medium Power Transistor (32V, 0.5A) 2SC2411K Features 1) High I . CMax . = 0.5A I CMax 2) Low V . CE(sat) Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor Absolute ...

Page 2

Transistors Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Packaging Specifications and h FE Package Code ...

Page 3

Transistors ° 0.5 0.2 0.1 0.05 0.02 0 100 200 500 1000 ( mA) COLLECTOR CURRENT : I C Fig.4 Collector-emitter saturation voltage ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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