2SC4097T106R Rohm Semiconductor, 2SC4097T106R Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single 2SC4097T106R
Manufacturer Part Number
2SC4097T106R
Description
TRANS NPN 32V 0.5A SOT-323
Manufacturer
Rohm Semiconductor
Specifications of 2SC4097T106R
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
600mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 10mA, 3V
Power - Max
200mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
32V
Power Dissipation Pd
200mW
Dc Collector Current
500mA
Transistor Case Style
SC-70
No. Of Pins
3
Svhc
No SVHC (18-Jun-2010)
Dc
RoHS Compliant
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
32 V
Emitter- Base Voltage Vebo
32 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
0.2 W
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
250 MHz
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SC4097T106R
Available stocks
Part Number:
2SC4097T106R
Transistors
Medium Power Transistor (32V, 0.5A)
2SC4097
1) High I
2) Low V
3) Complements the 2SA1577.
Epitaxial planar type
NPN silicon transistor
∗
Features
Structure
Absolute maximum ratings (Ta = 25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
P
I
Optimal for low voltage operation.
CMax
C
must not be exceeded.
. = 0.5A
CMax
CE(sat)
Parameter
.
.
Symbol
V
V
V
Tstg
P
CBO
CEO
I
Tj
EBO
C
C
−55 to +150
∗
Limits
External dimensions (Units : mm)
150
0.2
Denotes h
0.5
40
32
5
2SC4097
(1)
0.65 0.65
(3)
2.0±0.2
1.3±0.1
ROHM : UMT3
EIAJ : SC-70
FE
(2)
0.3
All terminals have same dimensions
Abbreviated symbol : C∗
+0.1
−0
Unit
°C
°C
W
V
V
V
A
0.15±0.05
∗
0.2
0.9±0.1
0.7±0.1
(1) Emitter
(2) Base
(3) Collector
0 ~ 0.1
Rev.A
2SC4097
1/3
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2SC4097T106R Summary of contents
Transistors Medium Power Transistor (32V, 0.5A) 2SC4097 Features 1) High I . CMax . = 0.5A I CMax 2) Low V . CE(sat) Optimal for low voltage operation. 3) Complements the 2SA1577. Structure Epitaxial planar type NPN silicon transistor Absolute ...
Transistors Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Packaging Specifications and h FE Package Code ...
Transistors ° 0.5 0.2 0.1 0.05 0.02 0 100 200 500 1000 ( mA) COLLECTOR CURRENT : I C Fig.4 Collector-emitter saturation voltage ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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