2SD1782KT146R Rohm Semiconductor, 2SD1782KT146R Datasheet

TRANS NPN 80V 0.5A SOT-346

2SD1782KT146R

Manufacturer Part Number
2SD1782KT146R
Description
TRANS NPN 80V 0.5A SOT-346
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SD1782KT146R

Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 100mA, 3V
Power - Max
200mW
Frequency - Transition
120MHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Npn
DRIVER
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
200mW
Dc Collector Current
500mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-346
No. Of
RoHS Compliant
Transistor Polarity
NPN
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SD1782KT146R
2SD1782KT146RTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD1782KT146R
Manufacturer:
ROHM
Quantity:
4 155
Part Number:
2SD1782KT146R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Power Transistor (80V, 0.5A)
2SD1782K
1) Low V
2) High V
3) Complements the 2SB1198K.
Epitaxial planar type
NPN silicon transistor
Features
Structure
Absolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
(I
C
CE(sat)
/ I
B
=0.5 A / 50mA)
CE(sat)
Parameter
CEO,
=0.2V(Typ.)
V
.
CEO
=80V
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
C
−55 to +150
Limits
150
0.5
0.2
80
80
5
External dimensions (Unit : mm)
ROHM : SMT3
EIAJ : SC-59
Denotes h
FE
Unit
°C
°C
W
V
V
V
A
(1)
0.95 0.95
2.9±0.2
1.9±0.2
All terminals have
same dimensions
(2)
(3)
0.4
+0.1
−0.05
Abbreviated symbol : AJ
0.15
Rev.A
+0.1
−0.06
1.1
0.8±0.1
2SD1782K
+0.2
−0.1
0~0.1
1/3
(1) Emitter
(2) Base
(3) Collector

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2SD1782KT146R Summary of contents

Page 1

Transistors Power Transistor (80V, 0.5A) 2SD1782K Features 1) Low V . CE(sat) V =0.2V(Typ.) CE(sat =0 50mA High V V =80V CEO, CEO 3) Complements the 2SB1198K. Structure Epitaxial planar type NPN ...

Page 2

Transistors Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Packaging specifications and h FE Package Code Basic ordering ...

Page 3

Transistors 1000 Ta=25°C 500 200 100 = 100 200 5001000 (mA) COLLECTOR CURRENT : I C Fig.4 Collector-emitter saturation voltage vs. collector current ( ) ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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