2SB1689T106 Rohm Semiconductor, 2SB1689T106 Datasheet
2SB1689T106
Manufacturer Part Number
2SB1689T106
Description
TRANS PNP 12V 1.5A SOT-323
Manufacturer
Rohm Semiconductor
Datasheet
1.2SB1689T106.pdf
(3 pages)
Specifications of 2SB1689T106
Transistor Type
PNP
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
200mV @ 25mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
270 @ 200mA, 2V
Power - Max
200mW
Frequency - Transition
400MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-12V
Power Dissipation Pd
200mW
Dc Collector Current
-1.5A
Transistor Case Style
SOT-323
No. Of Pins
3
Svhc
No SVHC (18-Jun-2010)
Dc
RoHS Compliant
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 12 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 1.5 A
Maximum Dc Collector Current
- 3 A
Power Dissipation
200 mW
Maximum Operating Frequency
400 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
270
Gain Bandwidth Product Ft
400 MHz
Dc Current Gain Hfe
270
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SB1689T106
2SB1689T106TR
2SB1689T106TR
Available stocks
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Part Number
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Quantity
Price
Company:
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Manufacturer:
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Quantity:
10 423
Part Number:
2SB1689T106
Manufacturer:
ROHM/罗姆
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20 000
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Part Number:
2SB1689T106
Manufacturer:
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Quantity:
18 217
Transistors
Genera purpose amplification(−12V, −1.5A)
2SB1689
Low frequency amplifier
Driver
1) A collector current is large.
2) Collector saturation voltage is low.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Application
Features
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Pulsed
Single pulse, P
Each terminal mounted on a recommended land pattern
V
at I
CE(sat)
C
= −500mA / I
≤ −200mV
Parameter
W
Parameter
1ms
B
= −25mA
Symbol
V
V
V
Tstg
I
P
Tj
CBO
CEO
EBO
I
CP
C
C
Symbol
V
BV
BV
BV
Cob
I
55 to 150
I
CE(sat)
h
CBO
EBO
f
FE
Limits
CBO
CEO
EBO
T
200
150
1.5
15
12
6
3
Min.
270
15
12
6
Unit
mW
V
V
V
A
A
C
C
1
2
Typ.
400
110
12
External dimensions (Unit : mm)
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
Type
2SB1689
Max.
Packaging specifications
680
100
100
200
MHz
Unit
mV
nA
nA
pF
V
V
V
0.1Min.
Abbreviated symbol : EV
Package
Code
Basic ordering unit (pieces)
I
I
I
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
1.25
2.1
10 A
1mA
10 A
500mA, I
Each terminal has same dimensions
6V
15V
2V, I
2V, I
10V, I
Conditions
C
E
E
200mA, f 100MHz
B
0A, f 1MHz
200mA
25mA
(1) Emitter
(2) Base
(3) Collector
2SB1689
Taping
T106
3000
1/2
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2SB1689T106 Summary of contents
Page 1
Transistors Genera purpose amplification(−12V, −1.5A) 2SB1689 Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. ≤ −200mV V CE(sat −500mA / I = −25mA C B Absolute maximum ...
Page 2
Transistors Electrical characteristic curves 1000 PULSED Ta 100 100 0.001 0.01 0 COLLECTOR CURRENT : Fig.1 DC current gain vs. collector current ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...