2SB1132T100Q Rohm Semiconductor, 2SB1132T100Q Datasheet

TRANSISTOR PNP 32V 1A SO-89

2SB1132T100Q

Manufacturer Part Number
2SB1132T100Q
Description
TRANSISTOR PNP 32V 1A SO-89
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SB1132T100Q

Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 3V
Power - Max
2W
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-32V
Power Dissipation Pd
500mW
Dc Collector Current
-1A
Transistor Case Style
SOT-89
No. Of Pins
3
Svhc
No SVHC (18-Jun-2010)
Dc Current
RoHS Compliant
Configuration
Single Dual Collector
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 32 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 1 A
Maximum Dc Collector Current
1 A
Power Dissipation
0.5 W
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
82
Gain Bandwidth Product Ft
150 MHz
Dc Current Gain Hfe
82
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SB1132T100QTR
Medium Power Transistor (32V,1A)
2SB1132 / 2SA1515S / 2SB1237
Features
1) Low V
CE(sat).
= 0.2V(Typ.)
V
CE(sat)
= 500mA / 50mA)
(I
/ I
C
B
2) Compliments 2SD1664 /
2SD1858
Structure
Epitaxial planar type
PNP silicon transistor
www.rohm.com
2009 ROHM Co., Ltd. All rights reserved.
c
Dimensions (Unit : mm)
2SB1132
2SA1515S
+0.2
4.5
−0.1
+0.2
1.5
+ −
−0.1
1.6 0.1
(1)
(2)
(3)
+0.1
0.4
−0.05
+ −
+ −
0.4 0.1
0.5 0.1
0.4 0.1
+ −
+ −
1.5 0.1
1.5 0.1
+ −
3.0 0.2
(1) Base
ROHM : MPT3
(2) Collector
EIAJ : SC-62
(3) Emitter
Abbreviated symbol: BA
2SB1237
+ −
2.5 0.2
+ −
6.8 0.2
0.65Max.
+ −
0.5 0.1
(1)
(2)
(3)
2.54 2.54
+ −
1.05
0.45 0.1
(1) Emitter
ROHM : ATV
(2) Collector
(3) Base
Denotes h
FE
1/4
+ −
+ −
4 0.2
2 0.2
+0.15
0.45
−0.05
2.5 +0.4
+0.15
0.45
−0.1
−0.05
0.5
5
(1) (2) (3)
(1) Emitter
ROHM : SPT
(2) Collector
EIAJ : SC-72
(3) Base
2009.12 - Rev.C

Related parts for 2SB1132T100Q

2SB1132T100Q Summary of contents

Page 1

Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low V CE(sat). = 0.2V(Typ.) V CE(sat) = 500mA / 50mA Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor www.rohm.com ...

Page 2

Parameter Symbol Collector-base voltage V CBO V Collector-emitter voltage CEO Emitter-base voltage V EBO I Collector current C 2SB1132 Collector power P C dissipation 2SA1515S 2SB1237 Junction temperature Tj Storage temperature ...

Page 3

-200 = -100 Ta 100 − - -20 - -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 ...

Page 4

Ta=25 C 100 10 1 0.1 0.001 0.01 0.1 10 100 1000 1 TIME : t (s) Fig.10 Transient thermal resistance (2SB1132) www.rohm.com ○ 2009 ROHM Co., Ltd. All rights reserved. c −5 Ta=25 ...

Page 5

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

Related keywords