TRANSISTOR PNP 32V 1A SO-89

2SB1132T100Q

Manufacturer Part Number2SB1132T100Q
DescriptionTRANSISTOR PNP 32V 1A SO-89
ManufacturerRohm Semiconductor
2SB1132T100Q datasheet
 


Specifications of 2SB1132T100Q

Transistor TypePNPCurrent - Collector (ic) (max)1A
Voltage - Collector Emitter Breakdown (max)32VVce Saturation (max) @ Ib, Ic500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce120 @ 100mA, 3VPower - Max2W
Frequency - Transition150MHzMounting TypeSurface Mount
Package / CaseSC-62, SOT-89, TO-243 (3 Leads + Tab)Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo-32VPower Dissipation Pd500mW
Dc Collector Current-1ATransistor Case StyleSOT-89
No. Of Pins3SvhcNo SVHC (18-Jun-2010)
Dc CurrentRoHS CompliantConfigurationSingle Dual Collector
Mounting StyleSMD/SMTCollector- Emitter Voltage Vceo Max- 32 V
Emitter- Base Voltage Vebo- 5 VContinuous Collector Current- 1 A
Maximum Dc Collector Current1 APower Dissipation0.5 W
Maximum Operating Frequency150 MHzMaximum Operating Temperature+ 150 C
Dc Collector/base Gain Hfe Min82Gain Bandwidth Product Ft150 MHz
Dc Current Gain Hfe82Rohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantCurrent - Collector Cutoff (max)-
Other names2SB1132T100QTR  
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Medium Power Transistor (32V,1A)
2SB1132 / 2SA1515S / 2SB1237
Features
1) Low V
CE(sat).
= 0.2V(Typ.)
V
CE(sat)
= 500mA / 50mA)
(I
/ I
C
B
2) Compliments 2SD1664 /
2SD1858
Structure
Epitaxial planar type
PNP silicon transistor
www.rohm.com
2009 ROHM Co., Ltd. All rights reserved.
c
Dimensions (Unit : mm)
2SB1132
2SA1515S
+0.2
4.5
−0.1
+0.2
1.5
+ −
−0.1
1.6 0.1
(1)
(2)
(3)
+0.1
0.4
−0.05
+ −
+ −
0.4 0.1
0.5 0.1
0.4 0.1
+ −
+ −
1.5 0.1
1.5 0.1
+ −
3.0 0.2
(1) Base
ROHM : MPT3
(2) Collector
EIAJ : SC-62
(3) Emitter
Abbreviated symbol: BA
2SB1237
+ −
2.5 0.2
+ −
6.8 0.2
0.65Max.
+ −
0.5 0.1
(1)
(2)
(3)
2.54 2.54
+ −
1.05
0.45 0.1
(1) Emitter
ROHM : ATV
(2) Collector
(3) Base
Denotes h
FE
1/4
+ −
+ −
4 0.2
2 0.2
+0.15
0.45
−0.05
2.5 +0.4
+0.15
0.45
−0.1
−0.05
0.5
5
(1) (2) (3)
(1) Emitter
ROHM : SPT
(2) Collector
EIAJ : SC-72
(3) Base
2009.12 - Rev.C

2SB1132T100Q Summary of contents

  • Page 1

    Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low V CE(sat). = 0.2V(Typ.) V CE(sat) = 500mA / 50mA Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor www.rohm.com ...

  • Page 2

    Parameter Symbol Collector-base voltage V CBO V Collector-emitter voltage CEO Emitter-base voltage V EBO I Collector current C 2SB1132 Collector power P C dissipation 2SA1515S 2SB1237 Junction temperature Tj Storage temperature ...

  • Page 3

    -200 = -100 Ta 100 − - -20 - -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 ...

  • Page 4

    Ta=25 C 100 10 1 0.1 0.001 0.01 0.1 10 100 1000 1 TIME : t (s) Fig.10 Transient thermal resistance (2SB1132) www.rohm.com ○ 2009 ROHM Co., Ltd. All rights reserved. c −5 Ta=25 ...

  • Page 5

    No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...