2SB1132T100Q Rohm Semiconductor, 2SB1132T100Q Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single 2SB1132T100Q
Manufacturer Part Number
2SB1132T100Q
Description
TRANSISTOR PNP 32V 1A SO-89
Manufacturer
Rohm Semiconductor
Specifications of 2SB1132T100Q
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 3V
Power - Max
2W
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-32V
Power Dissipation Pd
500mW
Dc Collector Current
-1A
Transistor Case Style
SOT-89
No. Of Pins
3
Svhc
No SVHC (18-Jun-2010)
Dc Current
RoHS Compliant
Configuration
Single Dual Collector
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 32 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 1 A
Maximum Dc Collector Current
1 A
Power Dissipation
0.5 W
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
82
Gain Bandwidth Product Ft
150 MHz
Dc Current Gain Hfe
82
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SB1132T100QTR
Available stocks
Part Number:
2SB1132T100Q
Part Number:
2SB1132T100Q
Part Number:
2SB1132T100Q
Part Number:
2SB1132T100Q
Part Number:
2SB1132T100Q
Medium Power Transistor (32V,1A)
Features
1) Low V
2) Compliments 2SD1664 /
Structure
Epitaxial planar type
PNP silicon transistor
○
c
www.rohm.com
V
(I
2SD1858
2SB1132 / 2SA1515S / 2SB1237
2009 ROHM Co., Ltd. All rights reserved.
CE(sat)
C
/ I
B
= 500mA / 50mA)
CE(sat).
= 0.2V(Typ.)
Dimensions (Unit : mm)
∗
0.65Max.
Denotes h
2SB1132
2SB1237
ROHM : MPT3
EIAJ : SC-62
1/4
Abbreviated symbol: BA
(1)
1.5 0.1
0.4 0.1
ROHM : ATV
2.54 2.54
+ −
+ −
6.8 0.2
(2)
FE
(1)
+ −
(3)
1.6 0.1
4.5
(2)
0.5 0.1
3.0 0.2
+ −
+ −
+ −
+0.2
−0.1
0.5 0.1
(3)
+ −
(1) Base
(2) Collector
(3) Emitter
0.4 0.1
1.5 0.1
+ −
∗
1.05
(1) Emitter
(2) Collector
(3) Base
1.5
2.5 0.2
+0.2
−0.1
+ −
0.45 0.1
0.4
+ −
+0.1
−0.05
2SA1515S
5
ROHM : SPT
EIAJ : SC-72
(1) (2) (3)
4 0.2
+ −
2.5 +0.4
0.45
−0.1
+0.15
−0.05
2009.12 - Rev.C
(1) Emitter
(2) Collector
(3) Base
0.5
2 0.2
+ −
0.45
+0.15
−0.05
Related parts for 2SB1132T100Q
2SB1132T100Q Summary of contents
Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low V CE(sat). = 0.2V(Typ.) V CE(sat) = 500mA / 50mA Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor www.rohm.com ...
Parameter Symbol Collector-base voltage V CBO V Collector-emitter voltage CEO Emitter-base voltage V EBO I Collector current C 2SB1132 Collector power P C dissipation 2SA1515S 2SB1237 Junction temperature Tj Storage temperature ...
-200 = -100 Ta 100 − - -20 - -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 ...
Ta=25 C 100 10 1 0.1 0.001 0.01 0.1 10 100 1000 1 TIME : t (s) Fig.10 Transient thermal resistance (2SB1132) www.rohm.com ○ 2009 ROHM Co., Ltd. All rights reserved. c −5 Ta=25 ...
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...
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