2SB1132T100Q Rohm Semiconductor, 2SB1132T100Q Datasheet - Page 3

• Manufacturer Part Number: 2SB1132T100Q
• Description: TRANSISTOR PNP 32V 1A SO-89
• Manufacturer: Rohm Semiconductor

Specifications of 2SB1132T100Q

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 100mA, 3V
• Power - Max: 2W
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -32V
• Power Dissipation Pd: 500mW
• Dc Collector Current: -1A
• Transistor Case Style: SOT-89
• No. Of Pins: 3
• Svhc: No SVHC (18-Jun-2010)
• Dc Current: RoHS Compliant
• Configuration: Single Dual Collector
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 32 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 0.5 W
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 82
• Gain Bandwidth Product Ft: 150 MHz
• Dc Current Gain Hfe: 82
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SB1132T100QTR

Electrical characteristics curves
○
2SB1132 / 2SA1515S / 2SB1237
c
www.rohm.com
1000
-500
-200
-100
500
200
100
200
100
-50
-20
-10
50
50
20
2009 ROHM Co., Ltd. All rights reserved.
-5
-2
-1
−1
Fig.1 Grounded emitter
−1
Fig.7 Gain bandwidth product
0
BASE TO EMITTER VOLTAGE : V
Ta
−2
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
COLLECTOR CURRENT : I
Fig.4 DC current gain vs.
−2
=
−
100 C
EMITTER CURRENT : I
25 C
55 C
propagation characteristics
−5 −10 −20
vs. emitter current
Ta=100 C
−5
collector current
−55 C
25 C
−10
−50 −100 −200 −500−1000
−20
E
(mA)
C
V
V
Ta=25 C
V
(mA)
CE
CE
CE
−50 −100
(ΙΙ)
= −
= − 3V
= − 5V
BE
(V)
6V
COLLECTOR TO EMITTER VOLTAGE : V
−500
−400
−300
−200
−100
−0.02
−0.01
−0.05
100
−0.5
−0.2
−0.1
Fig.8 Collector output capacitance
−1
50
20
10
Fig.2 Grounded emitter output
0
−1 −2
0
Fig.5 Collector-emitter saturation
−
−3.0
−3.5
−4.0
−4.5
−5.0
COLLECTOR TO BASE VOLTAGE : V
Ta=25 C
I
C
0.5
/I
B
COLLECTOR CURRENT : I
=10
−0.4
−5 −10 −20
vs.collector-base voltage
characteristics
voltage vs. collector current
−
1
−0.8
3/4
−
2
−50 −100 −200 −500 −1000 −2000
−2.5
−1.2
−
5
C
−1.6
(mA)
Ta=25 C
I
−
B
Ta=25 C
f=1MHz
I
=0mA
E
10
=0A
−2.0
−1.5
−1.0
−0.5
CE
CB
(V)
−2.0
−
(V)
20
1000
500
200
100
−1.0
−0.8
−0.6
−0.4
−0.2
−0.05
−0.02
−0.01
−0.5
−0.2
−0.1
50
−5
−2
−1
0
−1
−1
0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.6 Collector-emitter saturation
Ta=25 C
∗Single pulse
l
−2
C
Fig.3 DC current gain vs.
−0.2 −0.5
COLLECTOR CURRENT : I
= −300mA
Fig.9 Safe operation area
−2
BASE CURRENT : I
−5 −10 −20
voltage vs. base current
collector current
−5
2009.12 - Rev.C
(2SB1132)
−1
l
C
= −500mA
−10
−2
Data Sheet
−50 −100 −200 −500
V
CE
−20
−5 −10 −20
= −3V
B
−1V
(mA)
C
(mA)
Ta=25 C
Ta=25 C
(Ι)
−50 −100
CE
−1000
(V)
−50