2SD1898T100R Rohm Semiconductor, 2SD1898T100R Datasheet
2SD1898T100R
Manufacturer Part Number
2SD1898T100R
Description
TRANS NPN 80V 1A SOT-89
Manufacturer
Rohm Semiconductor
Datasheet
1.2SD1898T100Q.pdf
(4 pages)
Specifications of 2SD1898T100R
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
400mV @ 20mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 500mA, 3V
Power - Max
2W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Bce Npn
Transistor Polarity
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
500mW
Dc Collector Current
500mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-89
No. Of
RoHS Compliant
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
0.5 W
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
82
Gain Bandwidth Product Ft
100 MHz
Dc Current Gain Hfe
82
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SD1898T100R
2SD1898T100RTR
2SD1898T100RTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SD1898T100R
Manufacturer:
ROHM
Quantity:
1 660
Part Number:
2SD1898T100R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Part Number:
2SD1898T100R
Manufacturer:
ROHM
Quantity:
10 433
Power Transistor (80V, 1A)
Features
1) High V
2) High I
3) Good h
4) Low V
5) Complements the 2SB1260 /
Structure
Epitaxial planer type
NPN silicon transistor
○
c
www.rohm.com
2SB1241 / 2SB1181
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
2009 ROHM Co., Ltd. All rights reserved.
C
CE
CEO
, I
FE
C
(sat)
=1A (DC)
linearity
, V
CEO
=80V
Dimensions (Unit : mm)
0.65Max.
1/3
2SD1898
2SD1733
2SD1863
0.75
(1)
2.3
ROHM : CPT3
EIAJ : SC-63
ROHM : ATV
±
2.54 2.54
ROHM : MPT3
EIAJ : SC-62
0.9
(1)
6.8±0.2
Taping specifications
0.2
(2)
6.5
5.1
+
−
(2)
±
0.2
0.1
0.2
(3)
2.3
(3)
±
0.2
0.65
0.5±0.1
C0.5
±
0.1
1.05
2.5±0.2
(1) Base
(2) Collector
(3) Emitter
(1) Emitter
(2) Collector
(3) Base
0.45±0.1
1.0
2.3
0.55
1.5±0.1
0.5
0.4±0.1
+
−
±
0.2
±
0.1
0.2
±
0.1
0.1
Abbreviated symbol : DF
(1)
1.6±0.1
3.0±0.2
4.5
(2)
0.5±0.1
+0.2
−0.1
(3)
0.4±0.1
1.5±0.1
2SD1768S
ROHM : SPT
EIAJ : SC-72
1.5
5
+0.2
−0.1
(1) (2) (3)
Taping specifications
4±0.2
0.4
+0.1
−0.05
2.5 +0.4
0.45
−0.1
+0.15
−0.05
2009.12 - Rev.C
(1) Base
(2) Collector
(3) Emitter
(1) Emitter
(2) Collector
(3) Base
0.5
2±0.2
0.45
+0.15
−0.05
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2SD1898T100R Summary of contents
Page 1
Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features 1) High =80V CEO CEO 2) High =1A (DC Good h linearity FE 4) Low V (sat ...
Page 2
Parameter Symbol Collector-base voltage V CBO Collector-emitter voltage V CEO Emitter-base voltage V EBO Collector current I C 2SD1898 Collector power 2SD1733 P C dissipation 2SD1768S 2SD1863 Junction temperature ...
Page 3
Ta=25°C V =5V CE 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (V) BASE TO EMITTER VOLTAGE : V BE Fig.1 Grounded ...
Page 4
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...