2SC5053T100Q Rohm Semiconductor, 2SC5053T100Q Datasheet
2SC5053T100Q
Manufacturer Part Number
2SC5053T100Q
Description
TRANSISTOR NPN 50V 1A SOT-89
Manufacturer
Rohm Semiconductor
Datasheet
1.2SC5053T100Q.pdf
(3 pages)
Specifications of 2SC5053T100Q
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
400mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 500mA, 3V
Power - Max
2W
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Npn
MPT3
Collector Emitter Voltage V(br)ceo
50V
Power Dissipation Pd
500mW
Dc Collector Current
500mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-89
No. Of Pins
3
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
0.5 W
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
150 MHz
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SC5053T100QTR
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Transistors
Medium power transistor (50V, 1A)
2SC5053
1) Low saturation voltage, typically V
2) P
3) Complements the 2SA1900
∗ Denotes
Basic ordering unit (pleces)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base voltage
Collector-emitter voltage
Emitter- base voltage
Collector current
Collector power dissipation
Collector power dissipation
Storage temperature
∗1 Single pulse Pw=100ms
∗2 When mounted on a 40 40 0.7mm seramic board.
Features
Electrical characteristics (Ta=25°C)
Packaging specifications and h
Absolute maximum ratings (Ta=25°C)
I
B
C
= 500mA / 50mA
=2W (on 40×40×0.7mm ceramic board)
Package
Marking
Parameter
h
Code
Type
FE
h
FE
Parameter
2SC5053
MPT3
T100
1000
QR
CG
Symbol
V
V
V
t
P
stg
CBO
CEO
EBO
I
t
∗
C
j
C
Symbol
FE
BV
BV
BV
V
CE(sat)
Cob
I
I
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
T
EBO
= 0.12V at I
−55 to +150
Limits
150
60
50
0.5
5
1
2
2
Min.
120
60
50
5
−
−
−
−
−
C
/
Typ.
150
15
−
−
−
−
−
−
−
A (Pulse)
Unit
°C
°C
W
W
Dimensions (Unit : mm)
V
V
V
A
Max.
390
MPT3
(1)Base
(2)Collector
(3)Emitter
0.1
0.1
0.4
−
−
−
−
−
∗1
∗2
MHz
Unit
µA
µA
pF
V
V
V
V
−
I
I
I
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
= 50µA
/I
= 50µA
= 1mA
B
/I
= 40V
= 4V
= 5V , I
= 10V , I
= 500mA/50mA
C
= 3V/0.5A
E
= −50mA , f=100MHz
E
= 0A , f=1MHz
Conditions
Rev.D
2SC5053
1/2
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2SC5053T100Q Summary of contents
Page 1
Transistors Medium power transistor (50V, 1A) 2SC5053 Features 1) Low saturation voltage, typically 500mA / 50mA =2W (on 40×40×0.7mm ceramic board Complements the 2SA1900 Absolute maximum ratings (Ta=25°C) Symbol Parameter V Collector-base ...
Page 2
Transistors Electric characteristics curves 1000 9mA 10mA 900 800 700 600 500 400 300 200 100 COLLECTOR TO EMITTER VOLTAGE : V (V) CE Fig.1 Grounded emitter output characteristics 1000 Ta=25°C =5V V ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...