PBSS302ND,115 NXP Semiconductors, PBSS302ND,115 Datasheet
PBSS302ND,115
Specifications of PBSS302ND,115
934059129115
PBSS302ND T/R
PBSS302ND T/R
Related parts for PBSS302ND,115
PBSS302ND,115 Summary of contents
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PBSS302ND NPN low V Rev. 02 — 18 February 2008 1. Product profile 1.1 General description NPN low V small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PD. 1.2 Features I Ultra low collector-emitter saturation voltage ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS302ND 4. Marking Table 4. Type number PBSS302ND 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot PBSS302ND_2 Product data sheet Pinning Description ...
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... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T stg [1] Device mounted on a ceramic PCB, Al [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...
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... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...
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... NXP Semiconductors th(j-a) duty cycle = (K/ 0.5 0.33 0.2 0.1 10 0.05 0.02 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 ...
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... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS302ND_2 Product data sheet Characteristics Conditions collector-base cut-off current 150 C j collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter I = 0.5 A ...
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... NXP Semiconductors 1000 h FE 800 (1) 600 (2) 400 (3) 200 ( 100 C amb ( amb ( amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 1.2 (1) 0.8 (2) ( amb ( amb ( 100 C amb Fig 7. Base-emitter voltage as a function of collector current; typical values PBSS302ND_2 Product data sheet ...
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... NXP Semiconductors 1 V CEsat (1) (V) ( 100 C amb ( amb ( amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat ( ) ( 100 C amb ( amb ( amb Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values PBSS302ND_2 Product data sheet 006aaa276 V CEsat (V) 10 ...
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... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition Fig 14. Test circuit for switching times PBSS302ND_2 Product data sheet (probe) oscilloscope 450 0 Bon Boff Rev. 02 — 18 February 2008 PBSS302ND NPN low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope 450 DUT mlb826 = 0 ...
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... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS302ND [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...
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... NXP Semiconductors 11. Soldering Fig 16. Reflow soldering footprint SOT457 (SC-74) 5.05 Fig 17. Wave soldering footprint SOT457 (SC-74) PBSS302ND_2 Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 02 — 18 February 2008 ...
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... Release date PBSS302ND_2 20080218 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Section 1.1 “General • Section 1.4 “Quick reference • ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history ...