PBSS4320T,215 NXP Semiconductors, PBSS4320T,215 Datasheet - Page 3

TRANS NPN 20V 2A SOT23

PBSS4320T,215

Manufacturer Part Number
PBSS4320T,215
Description
TRANS NPN 20V 2A SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4320T,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
310mV @ 300mA, 3A
Dc Current Gain (hfe) (min) @ Ic, Vce
220 @ 1A, 2V
Power - Max
540mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
220
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
2 A
Maximum Dc Collector Current
5 A
Power Dissipation
300 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4157-2
934056854215
PBSS4320T T/R
PBSS4320T T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS4320T,215
Manufacturer:
NXP Semiconductors
Quantity:
7 200
Part Number:
PBSS4320T,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Operated under pulsed conditions: pulse width t
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
4. Operated under pulsed conditions: pulse width t
2004 Mar 18
V
V
V
I
I
I
I
P
T
T
T
R
SYMBOL
SYMBOL
C
CRP
CM
B
stg
j
amb
CBO
CEO
EBO
tot
20 V NPN low V
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
repetitive peak collector current
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to
ambient
PARAMETER
PARAMETER
CEsat
transistor
open emitter
open base
open collector
note 1
single peak
T
T
T
T
p
in free air; note 1
in free air; note 2
in free air; note 3
in free air; notes 1 and 4
p
amb
amb
amb
amb
≤ 100 ms; duty cycle δ ≤ 0.25.
≤ 100 ms; duty cycle δ ≤ 0.25.
≤ 25 °C; note 2
≤ 25 °C; note 3
≤ 25 °C; note 4
≤ 25 °C; notes 1 and 2
3
CONDITIONS
CONDITIONS
−65
−65
MIN.
VALUE
417
260
230
104
20
20
5
2
3
5
0.5
300
480
540
1.2
+150
150
+150
PBSS4320T
MAX.
Product data sheet
UNIT
K/W
K/W
K/W
K/W
V
V
V
A
A
A
A
mW
mW
mW
W
°C
°C
°C
2
2
2
2
.
.
.
.
UNIT

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