TRANS PNP 20V 5.5A SOT-223

PBSS302PZ,135

Manufacturer Part NumberPBSS302PZ,135
DescriptionTRANS PNP 20V 5.5A SOT-223
ManufacturerNXP Semiconductors
PBSS302PZ,135 datasheet
 

Specifications of PBSS302PZ,135

Package / CaseSOT-223 (3 leads + Tab), SC-73, TO-261Transistor TypePNP
Current - Collector (ic) (max)5.5AVoltage - Collector Emitter Breakdown (max)20V
Vce Saturation (max) @ Ib, Ic265mV @ 275mA, 5.5ADc Current Gain (hfe) (min) @ Ic, Vce200 @ 2A, 2V
Power - Max2WFrequency - Transition130MHz
Mounting TypeSurface MountMinimum Operating Temperature- 65 C
ConfigurationSingle Dual CollectorTransistor PolarityPNP
Mounting StyleSMD/SMTCollector- Emitter Voltage Vceo Max20 V
Emitter- Base Voltage Vebo5 VMaximum Dc Collector Current5.5 A
Power Dissipation2000 mWMaximum Operating Frequency130 MHz (Typ)
Maximum Operating Temperature+ 150 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-Other names568-4180-2
934059049135
PBSS302PZ /T3
PBSS302PZ /T3
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PBSS302PZ
20 V, 5.5 A PNP low V
Rev. 02 — 20 November 2009
1. Product profile
1.1 General description
PNP low V
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS302NZ.
1.2 Features
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol Parameter
V
collector-emitter voltage
CEO
I
collector current
C
I
peak collector current
CM
R
collector-emitter
CEsat
saturation resistance
[1]
Pulse test: t
(BISS) transistor
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
CEsat
and I
C
CM
) at high I
FE
Quick reference data
Conditions
open base
single pulse;
≤ 1 ms
t
p
= −4 A;
I
C
= −200 mA
I
B
≤ 300 μs; δ ≤ 0.02.
p
Product data sheet
CEsat
C
Min
Typ
Max
−20
-
-
−5.5
-
-
−11
-
-
[1]
-
35
50
Unit
V
A
A

PBSS302PZ,135 Summary of contents

  • Page 1

    PBSS302PZ 20 V, 5.5 A PNP low V Rev. 02 — 20 November 2009 1. Product profile 1.1 General description PNP low V small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NZ. 1.2 Features Low collector-emitter saturation voltage V High ...

  • Page 2

    ... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS302PZ 4. Marking Table 4. Type number PBSS302PZ PBSS302PZ_2 Product data sheet 20 V, 5.5 A PNP low V Pinning Description base collector emitter collector Ordering information Package Name Description SC-73 plastic surface-mounted package with increased heat sink ...

  • Page 3

    ... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...

  • Page 4

    ... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [3] Device mounted on a ceramic PCB th(j-a) (K/W) δ 0.75 ...

  • Page 5

    ... NXP Semiconductors 2 10 δ 0.75 Z th(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 δ 0.75 Z th(j-a) (K/W) ...

  • Page 6

    ... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol Parameter I collector-base cut-off CBO current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R collector-emitter CEsat saturation resistance V base-emitter BEsat saturation voltage V base-emitter turn-on BEon voltage t delay time d t rise time ...

  • Page 7

    ... NXP Semiconductors 1000 h FE 800 (1) 600 400 (2) (3) 200 0 −1 −10 −1 −10 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values −1 (V) −0.8 (1) (2) −0.4 (3) 0 −1 − ...

  • Page 8

    ... NXP Semiconductors −1 V CEsat (V) −1 −10 (1) (2) −2 −10 (3) −3 −10 −1 −10 −1 −10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω) 10 (1) (2) 1 (3) − ...

  • Page 9

    ... NXP Semiconductors 8. Test information − − Fig 13. BISS transistor switching time definition V Fig 14. Test circuit for switching times PBSS302PZ_2 Product data sheet 20 V, 5.5 A PNP low (probe) oscilloscope 450 Ω −12 − −0. Bon Boff Rev. 02 — 20 November 2009 PBSS302PZ (BISS) transistor ...

  • Page 10

    ... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT223 (SC-73) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS302PZ [1] For further information and the availability of packing methods, see PBSS302PZ_2 Product data sheet 20 V, 5.5 A PNP low V 6 ...

  • Page 11

    ... NXP Semiconductors 11. Soldering 1.3 1.2 (4×) (4×) Fig 16. Reflow soldering footprint SOT223 (SC-73) 1.9 Fig 17. Wave soldering footprint SOT223 (SC-73) PBSS302PZ_2 Product data sheet 20 V, 5.5 A PNP low V 7 3.85 3.6 3.5 0 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 8 ...

  • Page 12

    ... Document ID Release date PBSS302PZ_2 20091120 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 16 “Reflow soldering footprint SOT223 • Figure 17 “Wave soldering footprint SOT223 ...

  • Page 13

    ... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

  • Page 14

    ... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering ...