PBSS302PZ,135 NXP Semiconductors, PBSS302PZ,135 Datasheet
PBSS302PZ,135
Specifications of PBSS302PZ,135
934059049135
PBSS302PZ /T3
PBSS302PZ /T3
Related parts for PBSS302PZ,135
PBSS302PZ,135 Summary of contents
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PBSS302PZ 20 V, 5.5 A PNP low V Rev. 02 — 20 November 2009 1. Product profile 1.1 General description PNP low V small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NZ. 1.2 Features Low collector-emitter saturation voltage V High ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS302PZ 4. Marking Table 4. Type number PBSS302PZ PBSS302PZ_2 Product data sheet 20 V, 5.5 A PNP low V Pinning Description base collector emitter collector Ordering information Package Name Description SC-73 plastic surface-mounted package with increased heat sink ...
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... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...
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... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [3] Device mounted on a ceramic PCB th(j-a) (K/W) δ 0.75 ...
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... NXP Semiconductors 2 10 δ 0.75 Z th(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 δ 0.75 Z th(j-a) (K/W) ...
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... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol Parameter I collector-base cut-off CBO current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R collector-emitter CEsat saturation resistance V base-emitter BEsat saturation voltage V base-emitter turn-on BEon voltage t delay time d t rise time ...
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... NXP Semiconductors 1000 h FE 800 (1) 600 400 (2) (3) 200 0 −1 −10 −1 −10 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values −1 (V) −0.8 (1) (2) −0.4 (3) 0 −1 − ...
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... NXP Semiconductors −1 V CEsat (V) −1 −10 (1) (2) −2 −10 (3) −3 −10 −1 −10 −1 −10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω) 10 (1) (2) 1 (3) − ...
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... NXP Semiconductors 8. Test information − − Fig 13. BISS transistor switching time definition V Fig 14. Test circuit for switching times PBSS302PZ_2 Product data sheet 20 V, 5.5 A PNP low (probe) oscilloscope 450 Ω −12 − −0. Bon Boff Rev. 02 — 20 November 2009 PBSS302PZ (BISS) transistor ...
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... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT223 (SC-73) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS302PZ [1] For further information and the availability of packing methods, see PBSS302PZ_2 Product data sheet 20 V, 5.5 A PNP low V 6 ...
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... NXP Semiconductors 11. Soldering 1.3 1.2 (4×) (4×) Fig 16. Reflow soldering footprint SOT223 (SC-73) 1.9 Fig 17. Wave soldering footprint SOT223 (SC-73) PBSS302PZ_2 Product data sheet 20 V, 5.5 A PNP low V 7 3.85 3.6 3.5 0 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 8 ...
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... Document ID Release date PBSS302PZ_2 20091120 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 16 “Reflow soldering footprint SOT223 • Figure 17 “Wave soldering footprint SOT223 ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering ...