PBSS302PD,115 NXP Semiconductors, PBSS302PD,115 Datasheet

TRANS PNP 40V 4A LOW SAT SOT457

PBSS302PD,115

Manufacturer Part Number
PBSS302PD,115
Description
TRANS PNP 40V 4A LOW SAT SOT457
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS302PD,115

Package / Case
SC-74-6
Transistor Type
PNP
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
450mV @ 600mA, 6A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
175 @ 2A, 2V
Power - Max
1.1W
Frequency - Transition
110MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
30
Minimum Operating Temperature
- 65 C
Configuration
Single Quad Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 4 A
Maximum Dc Collector Current
4 A
Power Dissipation
2500 mW
Maximum Operating Frequency
110 MHz (Typ)
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4152-2
934059132115
PBSS302PD T/R
PBSS302PD T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS302ND.
I
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
[2]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS302PD
40 V, 4 A PNP low V
Rev. 02 — 6 December 2007
Ultra low collector-emitter saturation voltage V
4 A continuous collector current capability I
Up to 15 A peak current
Very low collector-emitter saturation resistance
High efficiency due to less heat generation
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
Pulse test: t
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
p
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
300 s;
0.02.
CEsat
Conditions
open base
single pulse;
t
I
I
p
C
B
(BISS) transistor
= 600 mA
= 6 A;
1 ms
C
CEsat
2
O
[1]
[2]
3
, standard footprint.
Min
-
-
-
-
Typ
-
-
-
55
Product data sheet
Max
75
40
4
15
Unit
V
A
A
m

Related parts for PBSS302PD,115

PBSS302PD,115 Summary of contents

Page 1

PBSS302PD PNP low V Rev. 02 — 6 December 2007 1. Product profile 1.1 General description PNP low V small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND. 1.2 Features I Ultra low collector-emitter saturation voltage ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS302PD 4. Marking Table 4. Type number PBSS302PD 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot PBSS302PD_2 Product data sheet Pinning Description ...

Page 3

... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T stg [1] Device mounted on a ceramic PCB, Al [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...

Page 5

... NXP Semiconductors th(j-a) duty cycle = (K/ 0.5 0.33 0.2 0.1 10 0.05 0.02 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 ...

Page 6

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS302PD_2 Product data sheet Characteristics Conditions collector-base cut-off current 150 C j collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter I = 0.5 A ...

Page 7

... NXP Semiconductors 600 ( 400 (2) (3) 200 ( 100 C amb ( amb ( amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 1.2 0.8 0 amb Fig 7. Base-emitter voltage as a function of collector current; typical values PBSS302PD_2 Product data sheet 006aaa282 ( (mA) C Fig 6. Collector current as a function of 006aaa283 1 ...

Page 8

... NXP Semiconductors 1 V CEsat ( ( 100 C amb ( amb ( amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat ( ) ( 100 C amb ( amb ( amb Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values PBSS302PD_2 Product data sheet 006aaa284 V CEsat (1) (2) ( (mA) ...

Page 9

... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition Fig 14. Test circuit for switching times PBSS302PD_2 Product data sheet (probe) oscilloscope 450 0 Bon Rev. 02 — 6 December 2007 PBSS302PD PNP low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope 450 DUT mgd624 = 0 ...

Page 10

... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBSS302PD [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...

Page 11

... NXP Semiconductors 11. Soldering Fig 16. Reflow soldering footprint SOT457 (SC-74) 5.05 Fig 17. Wave soldering footprint SOT457 (SC-74) PBSS302PD_2 Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 02 — 6 December 2007 ...

Page 12

... Release date PBSS302PD_2 20071206 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Section 1.1 “General • Section 1.4 “Quick reference • ...

Page 13

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 14

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history ...

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