2SB1326TV2R Rohm Semiconductor, 2SB1326TV2R Datasheet

TRANS PNP 20V 5A ATV

2SB1326TV2R

Manufacturer Part Number
2SB1326TV2R
Description
TRANS PNP 20V 5A ATV
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SB1326TV2R

Transistor Type
PNP
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
1V @ 100mA, 4A
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 500mA, 2V
Power - Max
1W
Frequency - Transition
120MHz
Mounting Type
Through Hole
Package / Case
ATV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
2SB1326TV2R
2SB1326TV2RTB

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SB1326TV2R
Manufacturer:
Rohm Semiconductor
Quantity:
1 807
Part Number:
2SB1326TV2R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Low frequency transistor (−20V, −5A)
2SB1386 / 2SB1412 / 2SB1326
! ! ! ! Features
1) Low V
2) Excellent DC current gain
3) Complements the 2SD2098 /
! ! ! ! Structure
Epitaxial planar type
PNP silicon transistor
V
(I
characteristics.
2SD2118 / 2SD2097.
C
CE(sat)
/I
B
= −4A / −0.1A)
CE(sat)
= −0.35V (Typ.)
.
! ! ! ! External dimensions (Units : mm)
∗ Denotes h
2SB1386
2SB1326
0.65Max.
ROHM : MPT3
EIAJ : SC-62
0.4±0.1
1.5±0.1
(1)
ROHM : ATV
FE
Abbreviated symbol: BH∗
2.54 2.54
6.8±0.2
(1)
(2)
1.6±0.1
(2)
4.5
(3)
0.5±0.1
3.0±0.2
+0.2
−0.1
(3)
0.5±0.1
(1) Base
(2) Collector
(3) Emitter
0.4±0.1
1.5±0.1
2SB1386 / 2SB1412 / 2SB1326
1.05
(1) Emitter
(2) Collector
(3) Base
1.5
+0.2
−0.1
2.5±0.2
0.4
0.45±0.1
+0.1
−0.05
2SB1412
ROHM : CPT3
EIAJ : SC-63
0.75
2.3
±
(1)
0.9
0.2
6.5
5.1
(2)
±
+0.2
−0.1
0.2
2.3
(3)
±
0.2
0.65
C0.5
±
0.1
(1) Base
(2) Collector
(3) Emitter
0.5
0.55
1.0
2.3
+ 0.2
− 0.1
±
±
0.2
0.1
±
0.1

Related parts for 2SB1326TV2R

2SB1326TV2R Summary of contents

Page 1

Transistors Low frequency transistor (−20V, −5A) 2SB1386 / 2SB1412 / 2SB1326 ! ! ! ! Features 1) Low V . CE(sat) = −0.35V (Typ.) V CE(sat) = −4A / −0.1A Excellent DC current gain characteristics. ...

Page 2

Transistors ! ! ! ! Absolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage V CBO Collector-emitter voltage V CEO Emitter-base voltage V EBO Collector current I C 2SB1386 Collector power P C dissipation 2SB1412 2SB1326 Junction temperature Tj Storage temperature ...

Page 3

Transistors ! ! ! ! Electrical characteristic curves -10 = − 100 °C 25 °C -1 − 25 °C -500m -200m -100m -50m -20m -10m -5m -2m -1m 0 -0.2 -0.4 -0.6 -0.8 ...

Page 4

Transistors - −25 ° °C Ta=100 °C -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0 -10 COLLECTOR CURRENT : I (A) C ...

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