2SD1758TLQ Rohm Semiconductor, 2SD1758TLQ Datasheet

TRANS NPN 32V 2A SOT-428

2SD1758TLQ

Manufacturer Part Number
2SD1758TLQ
Description
TRANS NPN 32V 2A SOT-428
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SD1758TLQ

Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
800mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 500mA, 3V
Power - Max
10W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Bce Npn
Transistor Polarity
Collector Emitter Voltage V(br)ceo
32V
Power Dissipation Pd
1W
Dc Collector Current
2A
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-428
No. Of Pins
3
Transistor Polarity
NPN
Dc Current Gain Hfe
82
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
2SD1758TLQ
2SD1758TLQTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD1758TLQ
Manufacturer:
LRC
Quantity:
2 128
Part Number:
2SD1758TLQ
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Medium power transistor (32V, 2A)
Features
1) Low V
2) Complements the 2SB1182 / 2SB1240
Structure
Epitaxial planar type NPN silicon transistor
Absolute maximum ratings (Ta=25C)
∗1 Single pulse, P
∗2 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm
Electrical characteristics (Ta=25C)
∗ Measured using pulse current.
c
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
www.rohm.com
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
V
(I
2SD1758 / 2SD1862
2010 ROHM Co., Ltd. All rights reserved.
CE(sat)
C
/I
B
= 2A / 0.2A)
CE(sat)
= 0.5V (Typ.)
W
Parameter
Parameter
=20ms
.
2SD1758
2SD1862
Symbol
V
BV
BV
BV
Cob
Symbol
I
I
CE(sat)
h
CBO
EBO
f
V
V
V
Tstg
FE
T
CBO
CEO
EBO
P
Tj
CBO
CEO
EBO
I
C
C
Min.
120
40
32
5
2
−55 to +150
or lager.
Limits
150
2.5
40
32
10
5
2
1
Typ.
100
0.5
30
Max.
390
0.8
W (T
1
1
A (Pulse) ∗1
A (DC)
Dimensions (Units : mm)
Unit
C
°C
°C
1/2
W
V
V
V
=25°C)
MHz
Unit
μA
μA
pF
2SD1758
V
V
V
V
∗2
ROHM : CPT3
EIAJ : SC-63
I
I
I
V
V
V
I
V
V
C
C
E
C
0.75
2.3±0.2
CB
EB
CE
CE
CB
=50μA
=1mA
=50μA
/I
B
0.9
(1)
=20V
=4V
=3V, I
=5V, I
=10V, I
=2A/0.2A
6.5±0.2
5.1
+0.2
−0.1
(2)
2.3±0.2
(3)
0.65±0.1
C
E
=0.5A
=−50mA, f=100MHz
E
C0.5
=0A, f=1MHz
Conditions
(1) Base
(2) Collector
(3) Emitter
0.5±0.1
0.55±0.1
1.0±0.2
2.3
+0.2
−0.1
2SD1862
0.65Max.
ROHM : ATV
(1)
2.54 2.54
6.8 ± 0.2
(2)
(3)
2010.04 - Rev.C
0.5 ± 0.1
1.05
(1) Emitter
(2) Collector
(3) Base
2.5 ± 0.2
0.45 ± 0.1

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2SD1758TLQ Summary of contents

Page 1

Medium power transistor (32V, 2A) 2SD1758 / 2SD1862 Features 1) Low V . CE(sat 0.5V (Typ.) CE(sat 0.2A Complements the 2SB1182 / 2SB1240 Structure Epitaxial planar type NPN silicon transistor ...

Page 2

FE Package Code Basic ordering Type h FE unit (pieces) 2SD1758 QR 2SD1862 QR h values are classified as follows : FE Item 120 to 270 180 to 390 FE ...

Page 3

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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