2SB1561T100Q Rohm Semiconductor, 2SB1561T100Q Datasheet
2SB1561T100Q
Manufacturer Part Number
2SB1561T100Q
Description
TRANS PNP 60V 2A SOT-89
Manufacturer
Rohm Semiconductor
Datasheet
1.2SB1561T100Q.pdf
(3 pages)
Specifications of 2SB1561T100Q
Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
350mV @ 50mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 500mA, 2V
Power - Max
2W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Bce Pnp
Transistor Polarity
Collector Emitter Voltage V(br)ceo
60V
Power Dissipation Pd
500mW
Dc Collector Current
1A
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-89
No. Of
RoHS Compliant
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 60 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
- 2 A
Maximum Dc Collector Current
2 A
Power Dissipation
0.5 W
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
200 MHz
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SB1561T100Q
2SB1561T100QTR
2SB1561T100QTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SB1561T100Q
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Medium Power Transistor (−60V, −2A)
Features
1) Low saturation voltage , typically
2) Collector-emitter voltage = −60V
3) Pc = 2W (on 40400.7mm ceramic board).
4) Complements the 2SD2391.
Absolute maximum ratings (Ta=25C)
Electrical characteristics (Ta=25C)
∗ Measured using pulse current
Packaging specifications and h
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
Basic ordering unit (pieces)
○
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40 40 0.7mm ceramic board.
c
www.rohm.com
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Denotes h
V
2SB1561
2009 ROHM Co., Ltd. All rights reserved.
CE (sat)
FE
Package
Marking
Code
Parameter
Type
= −0.15V at I
h
FE
Parameter
C
/ I
2SB1561
B
MPT3
T100
1000
BL
= −1A / −50mA.
Q
∗
Symbol
V
V
V
Tstg
I
P
CBO
CEO
EBO
I
Tj
CP
C
C
FE
Symbol
V
BV
BV
BV
Cob
I
I
CE(sat)
CBO
EBO
h
h
f
CBO
CEO
EBO
FE1
FE2
T
−55 to +150
Limits
−60
−60
150
0.5
−6
−2
−6
2
Min.
−60
−60
120
−6
45
−
−
−
−
−
−0.15
Typ.
200
23
−
−
−
−
−
−
−
Unit
°C
°C
W
V
V
V
A
A
1/2
−0.35
∗
∗
Max.
−0.1
−0.1
270
1
2
−
−
−
−
−
−
MHz
Unit
Dimensions (Unit : mm)
μA
μA
pF
V
V
V
V
−
−
MPT3
(1)Base
(2)Collector
(3)Emitter
I
I
I
V
V
I
V
V
V
V
C
C
E
C
CB
EB
CE
CE
CE
CB
=−50μA
=−1mA
=−50μA
/I
B
=−5V
=−50V
/I
/I
=−2V, I
=−10V, I
=−1A/−50mA
C
C
=−2V/−0.5A
=−2V/−1.5A
0.4
E
(1)
=0.5A, f=100MHz
E
=0A, f=1MHz
Conditions
1.5
(2)
4.5
1.6
0.5
3.0
1.5
(3)
0.4
2009.12 - Rev.A
1.5
0.4
∗
∗
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2SB1561T100Q Summary of contents
Page 1
Medium Power Transistor (−60V, −2A) 2SB1561 Features 1) Low saturation voltage , typically V = −0.15V −1A / −50mA. CE (sat Collector-emitter voltage = −60V (on 40400.7mm ceramic ...
Page 2
Electrical characteristic curves −2.0 −1.6 −1.2 −0.8 −0.4 0.0 −1 −2 −3 −4 −5 0 COLLECTOR TO EMITTER VOLTAGE : V (V) CE Fig.1 Grounded emitter output characteristics 1000 500 200 = − 100 50 −2V ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...