PBSS5540Z,115 NXP Semiconductors, PBSS5540Z,115 Datasheet
PBSS5540Z,115
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934055496115
PBSS5540Z T/R
PBSS5540Z T/R
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PBSS5540Z,115 Summary of contents
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DATA SHEET fpage M3D087 PBSS5540Z 40 V low V Product data sheet Supersedes data of 2001 Jan 26 DISCRETE SEMICONDUCTORS PNP transistor CEsat 2001 Sep 21 ...
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... NXP Semiconductors 40 V low V PNP transistor CEsat FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • ...
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... NXP Semiconductors 40 V low V PNP transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...
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... NXP Semiconductors 40 V low V PNP transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage CEsat R equivalent on-resistance CEsat V collector-emitter saturation voltage CEsat V base-emitter saturation voltage ...
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... NXP Semiconductors 40 V low V PNP transistor CEsat 1000 handbook, halfpage h FE 800 (1) 600 400 (2) 200 (3) 0 −1 −10 − − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. −10 ...
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... NXP Semiconductors 40 V low V PNP transistor CEsat −10 handbook, halfpage I C (A) −8 −6 −4 −2 0 −0.4 −0.8 −1 °C. T amb = −150 mA. = −90 mA. ( −135 mA. = −75 mA. ( −120 mA. = −60 mA. ( −105 mA. = −45 mA. ( Fig.6 Collector current as a function of collector-emitter voltage; typical values. ...
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... NXP Semiconductors 40 V low V PNP transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 2001 Sep scale ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...