2SB1412TLQ Rohm Semiconductor, 2SB1412TLQ Datasheet
2SB1412TLQ
Manufacturer Part Number
2SB1412TLQ
Description
TRANS PNP 20V 5A SOT-428
Manufacturer
Rohm Semiconductor
Specifications of 2SB1412TLQ
Transistor Type
PNP
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
1V @ 100mA, 4A
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 500mA, 2V
Power - Max
1W
Frequency - Transition
120MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 20 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
- 5 A
Maximum Dc Collector Current
- 10 A
Power Dissipation
10 W
Maximum Operating Frequency
120 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
82
Gain Bandwidth Product Ft
120 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SB1412TLQ
2SB1412TLQTR
2SB1412TLQTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SB1412TLQ
Manufacturer:
ROHM
Quantity:
2 514
Transistors
Low frequency transistor (−20V, −5A)
2SB1386 / 2SB1412 / 2SB1326
! ! ! ! Features
1) Low V
2) Excellent DC current gain
3) Complements the 2SD2098 /
! ! ! ! Structure
Epitaxial planar type
PNP silicon transistor
V
(I
characteristics.
2SD2118 / 2SD2097.
C
CE(sat)
/I
B
= −4A / −0.1A)
CE(sat)
= −0.35V (Typ.)
.
! ! ! ! External dimensions (Units : mm)
∗ Denotes h
2SB1386
2SB1326
0.65Max.
ROHM : MPT3
EIAJ : SC-62
0.4±0.1
1.5±0.1
(1)
ROHM : ATV
FE
Abbreviated symbol: BH∗
2.54 2.54
6.8±0.2
(1)
(2)
1.6±0.1
(2)
4.5
(3)
0.5±0.1
3.0±0.2
+0.2
−0.1
(3)
0.5±0.1
(1) Base
(2) Collector
(3) Emitter
0.4±0.1
1.5±0.1
2SB1386 / 2SB1412 / 2SB1326
1.05
(1) Emitter
(2) Collector
(3) Base
1.5
+0.2
−0.1
2.5±0.2
0.4
0.45±0.1
+0.1
−0.05
2SB1412
ROHM : CPT3
EIAJ : SC-63
0.75
2.3
±
(1)
0.9
0.2
6.5
5.1
(2)
±
+0.2
−0.1
0.2
2.3
(3)
±
0.2
0.65
C0.5
±
0.1
(1) Base
(2) Collector
(3) Emitter
0.5
0.55
1.0
2.3
+ 0.2
− 0.1
±
±
0.2
0.1
±
0.1
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2SB1412TLQ Summary of contents
Page 1
Transistors Low frequency transistor (−20V, −5A) 2SB1386 / 2SB1412 / 2SB1326 ! ! ! ! Features 1) Low V . CE(sat) = −0.35V (Typ.) V CE(sat) = −4A / −0.1A Excellent DC current gain characteristics. ...
Page 2
Transistors ! ! ! ! Absolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage V CBO Collector-emitter voltage V CEO Emitter-base voltage V EBO Collector current I C 2SB1386 Collector power P C dissipation 2SB1412 2SB1326 Junction temperature Tj Storage temperature ...
Page 3
Transistors ! ! ! ! Electrical characteristic curves -10 = − 100 °C 25 °C -1 − 25 °C -500m -200m -100m -50m -20m -10m -5m -2m -1m 0 -0.2 -0.4 -0.6 -0.8 ...
Page 4
Transistors - −25 ° °C Ta=100 °C -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0 -10 COLLECTOR CURRENT : I (A) C ...