2SD2098T100R Rohm Semiconductor, 2SD2098T100R Datasheet
2SD2098T100R
Manufacturer Part Number
2SD2098T100R
Description
TRANS NPN 20V 5A SOT-89
Manufacturer
Rohm Semiconductor
Specifications of 2SD2098T100R
Transistor Type
NPN
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
1V @ 100mA, 4A
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 500mA, 2V
Power - Max
2W
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Mpt3
NPN
Collector Emitter Voltage V(br)ceo
20V
Power Dissipation Pd
500mW
Dc Collector Current
4A
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-89
No. Of Pins
3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
5 A
Maximum Dc Collector Current
10 A
Power Dissipation
2 W
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
150 MHz
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SD2098T100R
2SD2098T100RTR
2SD2098T100RTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SD2098T100R
Manufacturer:
ROHM
Quantity:
1 000
Part Number:
2SD2098T100R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Low V
2SD2098 / 2SD2118 / 2SD2097
! ! ! ! Features
1) Low V
2) Excellent DC current gain characteristics.
3) Complements the 2SB1386 / 2SB1412 / 2SB1326.
! ! ! ! Structure
Epitaxial planar type
NPN silicon transistor
V
(I
C
CE(sat)
/I
B
= 4A / 0.1A)
CE(sat)
= 0.25V (Typ.)
.
CE(sat)
transistor (strobe flash)
! ! ! ! External dimensions (Units : mm)
∗ Denotes h
2SD2098 / 2SD2118 / 2SD2097
2SD2098
2SD2118
2SD2097
ROHM : MPT3
EIAJ : SC-62
ROHM : CPT3
EIAJ : SC-63
ROHM : ATV
0.65Max.
FE
(1)
0.75
2.3 ± 0.2
Abbreviated symbol : AH∗
2.54 2.54
6.8±0.2
(2)
(1)
0.9
5.1
6.5 ± 0.2
0.4±0.1
1.5±0.1
+0.2
−0.1
(2)
(3)
2.3 ± 0.2
(1)
(3)
0.5±0.1
0.65 ± 0.1
4.5
1.6±0.1
3.0±0.2
(2)
0.5±0.1
+0.2
−0.1
C0.5
(3)
1.05
0.4±0.1
1.5±0.1
2.5±0.2
2.3
0.5 ± 0.1
0.55 ± 0.1
1.0 ± 0.2
1.5
+ 0.2
− 0.1
0.45±0.1
(1) Base
(2) Collector
(3) Emitter
(1) Base
(2) Collector
(3) Emitter
(1) Emitter
(2) Collector
(3) Base
+0.2
−0.1
0.4
+0.1
−0.05
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2SD2098T100R Summary of contents
Page 1
Transistors Low V transistor (strobe flash) CE(sat) 2SD2098 / 2SD2118 / 2SD2097 ! ! ! ! Features 1) Low V . CE(sat 0.25V (Typ.) CE(sat 0.1A Excellent DC current gain ...
Page 2
Transistors ! ! ! ! Absolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage V Collector-emitter voltage V Emitter-base voltage V Collector current I 2SD2098 Collector power P dissipation 2SD2118 2SD2097 Junction temperature Storage temperature Tstg ∗1 Single pulse Pw=10ms ∗2 ...
Page 3
Transistors ! ! ! ! Electrical characteristic curves 10 = Ta=100°C 25°C 1 −25°C 0.5 0.2 0.1 0.05 0.02 0. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 (V) BASE TO EMITTER VOLTAGE ...
Page 4
Transistors 2 = 0.5 Ta=100°C 25°C 0.2 −25°C 0.1 0.05 0.02 0. 0.010.02 0.05 0.1 0.2 0 (A) COLLECTOR CURRENT : I C Fig.10 Collector-emitter saturation voltage vs. collector ...