2SB1182TLR Rohm Semiconductor, 2SB1182TLR Datasheet
2SB1182TLR
Manufacturer Part Number
2SB1182TLR
Description
TRANSISTOR PNP 32V 2A SOT-428
Manufacturer
Rohm Semiconductor
Datasheet
1.2SB1182TLQ.pdf
(4 pages)
Specifications of 2SB1182TLR
Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
800mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 500mA, 3V
Power - Max
10W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
32 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
2 A
Power Dissipation
10000 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 2 A
Dc Collector/base Gain Hfe Min
180
Maximum Operating Frequency
100 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SB1182TLR
2SB1182TLRTR
2SB1182TLRTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SB1182TLR
Manufacturer:
ROHM
Quantity:
2 701
Part Number:
2SB1182TLR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Medium power transistor (32V, 2A)
Features
1) Low V
2) Complements 2SD1758 / 2SD1862.
Structure
Epitaxial planar type
PNP silicon transistor
Absolute maximum ratings (Ta=25C)
Electrical characteristics (Ta=25C)
○
∗
c
www.rohm.com
∗
∗
Transition frequency
Output capacitance
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Measured using pulse current.
V
(I
1 Single pulse, Pw=100ms
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm
2SB1182 / 2SB1240
2010 ROHM Co., Ltd. All rights reserved.
C
CE(sat)
/I
B
= 2A / 0.2A)
CE(sat)
= 0.5V (Typ.)
Parameter
Parameter
.
2SB1240
2SB1182
Symbol
BV
BV
BV
V
Cob
I
I
Symbol
h
CBO
EBO
CE(sat)
f
V
V
V
FE
Tstg
CBO
CEO
EBO
T
P
Tj
CBO
CEO
EBO
I
C
C
Min.
−40
−32
120
−5
−
−
−
−
−
−55 to 150
2
Typ.
−0.5
100
50
or larger.
−
−
−
−
−
−
Limits
−40
−32
150
−5
−2
−3
10
1
Dimensions (Unit : mm)
Max.
−0.8
390
−1
−1
2SB1182
−
−
−
−
−
ROHM : CPT3
EIAJ : SC-63
0.75
1/3
2.3
±
0.9
(1)
0.2
MHz
6.5
5.1
Unit
W (Tc=25 °C )
μ A
μ A
pF
V
V
V
V
−
+0.2
−
(2)
±
A (Pulse)
0.1
0.2
2.3
A(DC)
(3)
Unit
±
°C
°C
W
0.2
V
V
V
0.65
I
I
I
V
V
I
V
V
V
C
C
E
C
±
C0.5
CB
EB
CE
CE
CB
= −50 μ A
= −50 μ A
= −1mA
/I
0.1
B
= −20V
= −4V
= −3V, I
= −5V, I
= −10V, I
= −2A/ −0.2A
∗
∗
1
2
(1) Base
(2) Collector
(3) Emitter
0.5
0.55
1.0
2.3
Conditions
C
E
+0.2
±
±
−
= −0.5A
=0.5A, f=100MHz
0.1
0.1
0.2
±
E
0.1
=0A, f=1MHz
2SB1240
0.65Max.
ROHM : ATV
(1)
∗
∗
2.54 2.54
6.8
(2)
±
0.2
(3)
2010.04 - Rev.C
0.5
±
0.1
1.05
(1) Emitter
(2) Collector
(3) Base
2.5
±
0.2
0.45
±
0.1
Related parts for 2SB1182TLR
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
DIODE SWITCH 80V 25MA SMD5 TR
Manufacturer:
Rohm Semiconductor
Datasheet:
2SB1182TLR Summary of contents
Page 1
Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features 1) Low V . CE(sat) = 0.5V (Typ.) V CE(sat) = 2A / 0.2A Complements 2SD1758 / 2SD1862. Structure Epitaxial planar type PNP silicon transistor Absolute ...
Page 2
FE Package Code Type h Basic ordering unit (pieces) FE 2SB1182 QR 2SB1240 QR h values are classified as follows : FE Item 120 to 270 180 to 390 FE ...
Page 3
I . (Pulse) P =500μs C Max W −2 DC −1 −0.5 P =1ms W P =100ms W −0.2 −0.1 −0.05 Ta=25°C ∗Single −0.02 nonrepetitive pulse −0.01 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 ...
Page 4
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...