PBSS302NZ,135 NXP Semiconductors, PBSS302NZ,135 Datasheet - Page 4

• Manufacturer Part Number: PBSS302NZ,135
• Description: TRANS NPN 20V 5.8A SOT-223
• Manufacturer: NXP Semiconductors

Specifications of PBSS302NZ,135

• Transistor Type: NPN
• Current - Collector (ic) (max): 5.8A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 290mA, 5.8A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 568-4179-2; 934059043135; PBSS302NZ /T3; PBSS302NZ /T3

NXP Semiconductors
6. Thermal characteristics
PBSS302NZ_2
Product data sheet
Fig 2.
Z
(K/W)
th(j-a)
10
10
10
10
−1
1
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
δ = 1
0.50
0.20
0.10
0.05
0.02
0.01
0
0.75
0.33
10
−4
Table 6.
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
10
−3
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
10
Rev. 02 — 20 November 2009
−2
10
−1
2
O
3
, standard footprint.
Conditions
in free air
20 V, 5.8 A NPN low V
1
10
[1]
[2]
[3]
Min
-
-
-
-
PBSS302NZ
CEsat
10
Typ
-
-
-
-
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
p
006aaa561
(s)
Max
179
74
63
15
10
3
2
.
Unit
K/W
K/W
K/W
K/W
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