PBSS302NZ,135 NXP Semiconductors, PBSS302NZ,135 Datasheet - Page 5

• Manufacturer Part Number: PBSS302NZ,135
• Description: TRANS NPN 20V 5.8A SOT-223
• Manufacturer: NXP Semiconductors

Specifications of PBSS302NZ,135

• Transistor Type: NPN
• Current - Collector (ic) (max): 5.8A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 290mA, 5.8A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 568-4179-2; 934059043135; PBSS302NZ /T3; PBSS302NZ /T3

NXP Semiconductors
PBSS302NZ_2
Product data sheet
Fig 3.
Fig 4.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
−1
−1
1
1
2
10
2
10
FR4 PCB, mounting pad for collector 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
−5
δ = 1
δ = 1
0.50
0.20
0.10
0.05
0.02
0.01
0.50
0.20
0.10
0.05
0.02
0.01
0
0
0.75
0.33
0.75
0.33
10
10
−4
−4
2
O
3
, standard footprint
10
10
−3
−3
10
10
2
Rev. 02 — 20 November 2009
−2
−2
10
10
−1
−1
20 V, 5.8 A NPN low V
1
1
10
10
PBSS302NZ
CEsat
10
10
2
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
t
p
p
006aaa562
006aaa563
(s)
(s)
10
10
3
3
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