PBSS302NZ,135 NXP Semiconductors, PBSS302NZ,135 Datasheet - Page 6

TRANS NPN 20V 5.8A SOT-223

PBSS302NZ,135

Manufacturer Part Number
PBSS302NZ,135
Description
TRANS NPN 20V 5.8A SOT-223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS302NZ,135

Transistor Type
NPN
Current - Collector (ic) (max)
5.8A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
250mV @ 290mA, 5.8A
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 2A, 2V
Power - Max
2W
Frequency - Transition
140MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
568-4179-2
934059043135
PBSS302NZ /T3
PBSS302NZ /T3
NXP Semiconductors
7. Characteristics
PBSS302NZ_2
Product data sheet
Table 7.
T
[1]
Symbol Parameter
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
C unless otherwise specified.
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
Rev. 02 — 20 November 2009
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
f = 100 MHz
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
C
C
Bon
Boff
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 °C
= 0.5 A; I
= 1 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 4 A; I
= 4 A; I
= 5.8 A; I
= 4 A; I
= 4 A; I
= 1 A; I
= 4 A; I
= 0.15 A;
= −0.15 A
= 5 V; I
= 20 V; I
= 20 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
= 10 V; I
= 12.5 V; I
B
B
B
B
B
B
B
B
B
B
= 50 mA
= 10 mA
= 40 mA
= 200 mA
= 400 mA
= 40 mA
= 200 mA
= 40 mA
= 100 mA
= 400 mA
C
C
C
C
C
C
B
B
C
E
E
C
E
= 0 A
= 50 mA
= 290 mA
= 0.5 A
= 1 A
= 2 A
= 4 A
= 7 A
= 2 A
20 V, 5.8 A NPN low V
= 0 A
= 0 A;
= i
= 100 mA;
C
= 3 A;
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
-
Min
-
-
-
300
300
250
200
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS302NZ
CEsat
Typ
-
-
-
570
550
520
450
350
20
35
50
70
120
115
155
170
30
38
0.82
0.92
0.75
15
40
55
270
85
355
140
95
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
100
50
100
-
-
-
-
-
25
50
70
100
170
165
240
250
43
60
0.9
1.05
0.85
-
-
-
-
-
-
-
150
Unit
nA
μA
nA
mV
mV
mV
mV
mV
mV
mV
mV
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
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