PBSS302NZ,135 NXP Semiconductors, PBSS302NZ,135 Datasheet - Page 8

• Manufacturer Part Number: PBSS302NZ,135
• Description: TRANS NPN 20V 5.8A SOT-223
• Manufacturer: NXP Semiconductors

Specifications of PBSS302NZ,135

• Transistor Type: NPN
• Current - Collector (ic) (max): 5.8A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 290mA, 5.8A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 568-4179-2; 934059043135; PBSS302NZ /T3; PBSS302NZ /T3

NXP Semiconductors
PBSS302NZ_2
Product data sheet
Fig 9.
Fig 11. Collector-emitter saturation resistance as a
V
R
CEsat
CEsat
(V)
(Ω)
10
10
10
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
10
10
10
−1
−2
−3
−1
−2
1
3
2
1
10
10
I
Collector-emitter saturation voltage as a
function of collector current; typical values
I
function of collector current; typical values
−1
C
−1
C
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
1
1
10
10
10
10
2
2
(1)
(2)
(3)
10
10
(1)
(2)
(3)
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3
006aaa577
3
I
I
C
C
(mA)
(mA)
Rev. 02 — 20 November 2009
10
10
4
4
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
R
V
CEsat
CEsat
(Ω)
(V)
10
10
10
(1) I
(2) I
(3) I
10
10
(1) I
(2) I
(3) I
10
10
10
−1
−2
−3
−1
−2
1
1
10
3
2
10
T
function of collector current; typical values
T
function of collector current; typical values
20 V, 5.8 A NPN low V
−1
C
C
C
−1
C
C
C
amb
amb
/I
/I
/I
/I
/I
/I
(1)
(2)
(3)
B
B
B
B
B
B
(1)
(3)
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
(2)
1
1
10
10
PBSS302NZ
10
10
2
2
CEsat
© NXP B.V. 2009. All rights reserved.
10
10
(BISS) transistor
006aaa575
006aaa579
3
3
I
I
C
C
(mA)
(mA)
10
10
4
4
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