2SD1733TLQ Rohm Semiconductor, 2SD1733TLQ Datasheet

TRANS NPN 80V 1A SOT-428

2SD1733TLQ

Manufacturer Part Number
2SD1733TLQ
Description
TRANS NPN 80V 1A SOT-428
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SD1733TLQ

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
400mV @ 20mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 500mA, 3V
Power - Max
1W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
2 A
Power Dissipation
10 W
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
100 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SD1733TLQ
2SD1733TLQTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD1733TLQ
Manufacturer:
ST
Quantity:
2 400
Part Number:
2SD1733TLQ
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Power Transistor (80V, 1A)
Features
1) High V
2) High I
3) Good h
4) Low V
5) Complements the 2SB1260 /
Structure
Epitaxial planer type
NPN silicon transistor
c
www.rohm.com
2SB1241 / 2SB1181
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
2009 ROHM Co., Ltd. All rights reserved.
C
CE
CEO
, I
FE
C
(sat)
=1A (DC)
linearity
, V
CEO
=80V
Dimensions (Unit : mm)
0.65Max.
1/3
2SD1898
2SD1733
2SD1863
0.75
(1)
2.3
ROHM : CPT3
EIAJ : SC-63
ROHM : ATV
±
2.54 2.54
ROHM : MPT3
EIAJ : SC-62
0.9
(1)
6.8±0.2
Taping specifications
0.2
(2)
6.5
5.1
+
(2)
±
0.2
0.1
0.2
(3)
2.3
(3)
±
0.2
0.65
0.5±0.1
C0.5
±
0.1
1.05
2.5±0.2
(1) Base
(2) Collector
(3) Emitter
(1) Emitter
(2) Collector
(3) Base
0.45±0.1
1.0
2.3
0.55
1.5±0.1
0.5
0.4±0.1
+
±
0.2
±
0.1
0.2
±
0.1
0.1
Abbreviated symbol : DF
(1)
1.6±0.1
3.0±0.2
4.5
(2)
0.5±0.1
+0.2
−0.1
(3)
0.4±0.1
1.5±0.1
2SD1768S
ROHM : SPT
EIAJ : SC-72
1.5
5
+0.2
−0.1
(1) (2) (3)
Taping specifications
4±0.2
0.4
+0.1
−0.05
2.5 +0.4
0.45
−0.1
+0.15
−0.05
2009.12 - Rev.C
(1) Base
(2) Collector
(3) Emitter
(1) Emitter
(2) Collector
(3) Base
0.5
2±0.2
0.45
+0.15
−0.05

Related parts for 2SD1733TLQ

2SD1733TLQ Summary of contents

Page 1

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features 1) High =80V CEO CEO 2) High =1A (DC Good h linearity FE 4) Low V (sat ...

Page 2

Parameter Symbol Collector-base voltage V CBO Collector-emitter voltage V CEO Emitter-base voltage V EBO Collector current I C 2SD1898 Collector power 2SD1733 P C dissipation 2SD1768S 2SD1863 Junction temperature ...

Page 3

Ta=25°C V =5V CE 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (V) BASE TO EMITTER VOLTAGE : V BE Fig.1 Grounded ...

Page 4

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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