2SD1980TL Rohm Semiconductor, 2SD1980TL Datasheet
2SD1980TL
Manufacturer Part Number
2SD1980TL
Description
TRANS DARL NPN 100V 2A SOT-428
Manufacturer
Rohm Semiconductor
Datasheet
1.2SD1980TL.pdf
(1 pages)
Specifications of 2SD1980TL
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
1.5V @ 1mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 1A, 2V
Power - Max
10W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Bce Npn
Transistor Polarity
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation Pd
1W
Dc Collector Current
1A
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-428
No. Of Pins
3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
6 V
Collector- Base Voltage Vcbo
100 V
Maximum Dc Collector Current
2 A
Maximum Collector Cut-off Current
10 uA
Power Dissipation
1 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
2 A
Dc Collector/base Gain Hfe Min
1000
Gain Bandwidth Product Ft
80 MHz
Dc Current Gain Hfe
1000
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SD1980TL
2SD1980TLTR
2SD1980TLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD1980TL
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Power Transistor (100V , 2A)
2SD2195 / 2SD1980 / 2SD1867
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1580 / 2SB1316.
Package
h
Marking
Code
Basic ordering unit (pieces)
1 Single pulse Pw 100ms
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
3 Printed circuit board, 1.7mm thick, collector plating 100mm
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltag
DC current transfer ratio
Output capacitance
Measured using pulse current.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
Denotes h
FE
Features
Absolute maximum ratings (Ta = 25 C)
Packaging specifications and h
Equivalent circuit
Electrical characteristics (Ta = 25 C)
B
FE
R
R
Parameter
1
2
Type
Parameter
2SD1980
2SD1867
2SD2195
R
3.5k
300
1
R
B
C
E
2
: Base
: Collector
: Emitter
C
E
2SD2195
1k~10k
MPT3
T100
1000
DP
Symbol
V
V
V
Tstg
P
Tj
Symbol
CBO
CEO
EBO
I
BV
BV
V
C
C
Cob
I
I
CE(sat)
CBO
EBO
h
CBO
CEO
FE
2SD1980
1k~10k
CPT3
2500
TL
FE
1000
Min.
100
100
Limits
55~ 150
100
100
150
2
10
6
2
3
or larger.
2
1
1
2SD1867
1k~10k
2500
ATV
TV2
Typ.
25
W(Tc 25 C)
10000
A(Pulse)
Max.
A(DC)
1.5
10
3
Unit
W
W
V
V
V
C
C
Unit
mA
pF
V
V
V
1
2
3
A
I
I
V
V
I
V
V
C
C
C
CB
EB
CE
CB
50 A
5mA
1A , I
100V
5V
2V , I
10V , I
2SD2195
2SD1980
2SD1867
External dimensions (Units : mm)
B
2SD2195 / 2SD1980 / 2SD1867
C
ROHM : MPT3
EIAJ : SC-62
ROHM : CPT3
EIAJ : SC-63
ROHM : ATV
E
1mA
1A
0A , f
Conditions
0.65Max.
1MHz
( 1 )
0.8Min.
( 2 )
2.54
6.8
1.0
2.5
2.54
( 3 )
( 1 )
( 2 )
( 3 )
1.5
4.0
0.9
2.5
9.5
5.5
0.5
0.5
Taping specifications
1.5
1.05
C0.5
2.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Emitter
(2) Collector
(3) Base
0.45
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