2SB1316TL Rohm Semiconductor, 2SB1316TL Datasheet
2SB1316TL
Manufacturer Part Number
2SB1316TL
Description
TRANS DARL PNP 100V 2A SOT-428
Manufacturer
Rohm Semiconductor
Datasheet
1.2SB1316TL.pdf
(1 pages)
Specifications of 2SB1316TL
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
1.5V @ 1mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 1A, 2V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Bce Pnp
DARL
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation Pd
1W
Dc Collector Current
-1A
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
D-PAK
No. Of
RoHS Compliant
Transistor Polarity
PNP
Dc Current Gain Hfe
1000
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SB1316TL
2SB1316TLTR
2SB1316TLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SB1316TL
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Power Transistor ( 100V , 2A)
2SB1580 / 2SB1316
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Collector
power
dissipation
1 Single pulse Pw 100ms
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Denotes h
Measured using pulse current.
Features
Absolute maximum ratings (Ta = 25 C)
Packaging specifications and h
Equivalent circuit
Electrical characteristics (Ta = 25 C)
Basic ordering unit (pieces)
B
FE
R
R
Package
Parameter
Marking
1
2
Type
Code
2SB1316
2SB1580
h
R
3.5k
300
Parameter
FE
1
R
B
C
E
2
: Base
: Collector
: Emitter
C
E
2SB1580
1k~10k
MPT3
T100
1000
BN
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
C
Symbol
V
BV
BV
Cob
I
I
CE(sat)
CBO
EBO
h
CBO
CEO
FE
2SB1316
1k~10k
CPT3
55~ 150
FE
2500
Limits
TL
150
100
100
10
2
1
8
2
3
1000
Min.
100
100
Typ.
35
W(Tc 25 C)
A(Pulse)
A(DC)
Unit
W
C
C
V
V
V
10000
Max.
1.5
10
3
1
2
Unit
mA
pF
V
V
V
A
I
I
V
V
I
V
V
C
C
C
CB
EB
CE
CB
/I
B
50 A
5mA
1A/ 1mA
100V
7V
2V , I
10V , I
External dimensions (Units : mm)
2SB1580
2SB1316
ROHM : MPT3
EIAJ : SC-62
ROHM : CPT3
EIAJ : SC-63
C
E
Conditions
1A
0A , f
1MHz
0.8Min.
2SB1580 / 2SB1316
2.5
1.0
1.5
( 1 )
( 2 )
( 3 )
0.9
9.5
5.5
4.0
2.5
0.5
1.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
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