2SB1316TL Rohm Semiconductor, 2SB1316TL Datasheet

TRANS DARL PNP 100V 2A SOT-428

2SB1316TL

Manufacturer Part Number
2SB1316TL
Description
TRANS DARL PNP 100V 2A SOT-428
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SB1316TL

Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
1.5V @ 1mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 1A, 2V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Bce Pnp
DARL
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation Pd
1W
Dc Collector Current
-1A
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
D-PAK
No. Of
RoHS Compliant
Transistor Polarity
PNP
Dc Current Gain Hfe
1000
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SB1316TL
2SB1316TLTR
Transistors
Power Transistor ( 100V , 2A)
2SB1580 / 2SB1316
Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.
Absolute maximum ratings (Ta = 25 C)
Parameter
Symbol
Collector-base voltage
V
CBO
Collector-emitter voltage
V
CEO
Emitter-base voltage
V
EBO
Collector current
I
C
2SB1580
Collector
power
P
C
2SB1316
dissipation
Junction temperature
Tj
Storage temperature
Tstg
55~ 150
1 Single pulse Pw 100ms
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Packaging specifications and h
FE
Type
2SB1580
2SB1316
Package
MPT3
CPT3
h
1k~10k
1k~10k
FE
Marking
BN
Code
T100
Basic ordering unit (pieces)
1000
2500
Denotes h
FE
Equivalent circuit
C
B
R
R
1
2
E
R
3.5k
B
: Base
1
C
: Collector
R
300
2
E
: Emitter
Electrical characteristics (Ta = 25 C)
Parameter
Symbol
Collector-base breakdown voltage
BV
CBO
Collector-emitter breakdown voltage
BV
CEO
Collector cutoff current
I
CBO
Emitter cutoff current
I
EBO
Collector-emitter saturation voltage
V
CE(sat)
DC current transfer ratio
h
FE
Output capacitance
Cob
Measured using pulse current.
External dimensions (Units : mm)
2SB1580
Limits
Unit
100
V
100
V
8
V
2
A(DC)
2SB1316
A(Pulse)
1
3
2
2
W
1
10
W(Tc 25 C)
150
C
C
TL
Min.
Typ.
Max.
Unit
V
I
50 A
100
C
V
I
5mA
100
C
10
A
V
100V
CB
3
mA
V
7V
EB
V
1.5
I
/I
1A/ 1mA
C
B
1000
10000
V
2V , I
CE
35
pF
V
10V , I
CB
2SB1580 / 2SB1316
4.0
1.0
2.5
0.5
( 1 )
( 2 )
( 3 )
ROHM : MPT3
EIAJ : SC-62
5.5
1.5
0.9
C0.5
0.8Min.
1.5
2.5
9.5
ROHM : CPT3
EIAJ : SC-63
Conditions
1A
C
0A , f
1MHz
E
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)

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