TRANS PNP 80V 4A SOT-89

PBSS305PX,115

Manufacturer Part NumberPBSS305PX,115
DescriptionTRANS PNP 80V 4A SOT-89
ManufacturerNXP Semiconductors
PBSS305PX,115 datasheet
 

Specifications of PBSS305PX,115

Package / CaseSC-62, SOT-89, TO-243 (3 Leads + Tab)Transistor TypePNP
Current - Collector (ic) (max)4AVoltage - Collector Emitter Breakdown (max)80V
Vce Saturation (max) @ Ib, Ic420mV @ 235mA, 4.7ADc Current Gain (hfe) (min) @ Ic, Vce120 @ 2A, 2V
Power - Max2.1WFrequency - Transition100MHz
Mounting TypeSurface MountMinimum Operating Temperature- 65 C
ConfigurationSingleTransistor PolarityPNP
Mounting StyleSMD/SMTCollector- Emitter Voltage Vceo Max80 V
Emitter- Base Voltage Vebo5 VMaximum Dc Collector Current4 A
Power Dissipation2100 mWMaximum Operating Frequency100 MHz (Typ)
Maximum Operating Temperature+ 150 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-Other names568-4178-2
934059018115
PBSS305PX T/R
PBSS305PX T/R
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PBSS305PX
80 V, 4.0 A PNP low V
Rev. 02 — 8 December 2009
1. Product profile
1.1 General description
PNP low V
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS305NX.
1.2 Features
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
Pulse test: t
(BISS) transistor
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT89
CEsat
and I
C
CM
) at high I
FE
Quick reference data
Parameter
Conditions
collector-emitter voltage
open base
collector current
peak collector current
single pulse;
≤ 1 ms
t
p
= −4 A;
collector-emitter saturation
I
C
= −200 mA
resistance
I
B
≤ 300 μs; δ ≤ 0.02.
p
Product data sheet
CEsat
C
Min
Typ
Max
−80
-
-
−4
-
-
−8
-
-
[1]
-
58
83
Unit
V
A
A

PBSS305PX,115 Summary of contents

  • Page 1

    PBSS305PX 80 V, 4.0 A PNP low V Rev. 02 — 8 December 2009 1. Product profile 1.1 General description PNP low V (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305NX. 1.2 Features Low collector-emitter ...

  • Page 2

    ... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number Package PBSS305PX 4. Marking Table 4. Type number PBSS305PX [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS305PX_2 Product data sheet 80 V, 4.0 A PNP low V Pinning Description emitter collector base ...

  • Page 3

    ... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...

  • Page 4

    ... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [3] Device mounted on a ceramic PCB th(j-a) (K/W) δ 0.75 ...

  • Page 5

    ... NXP Semiconductors 2 10 δ 0.75 Z th(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 δ 0.75 th(j-a) (K/W) ...

  • Page 6

    ... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol Parameter I collector-base cut-off CBO current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R collector-emitter CEsat saturation resistance V base-emitter BEsat saturation voltage V base-emitter turn-on BEon voltage t delay time d t rise time ...

  • Page 7

    ... NXP Semiconductors 600 h FE (1) 400 (2) 200 (3) 0 −1 −10 −1 −10 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values −1 (V) −0.8 (1) (2) −0.4 (3) 0 −1 −10 − ...

  • Page 8

    ... NXP Semiconductors −10 V CEsat (V) −1 −1 −10 (1) (2) (3) −2 −10 −1 −10 −1 −10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 −2 10 −1 − ...

  • Page 9

    ... NXP Semiconductors 8. Test information − − Fig 13. BISS transistor switching time definition V Fig 14. Test circuit for switching times PBSS305PX_2 Product data sheet 80 V, 4.0 A PNP low (probe) oscilloscope 450 Ω −12 − −0. Bon Boff Rev. 02 — 8 December 2009 PBSS305PX (BISS) transistor ...

  • Page 10

    ... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT89 (SC-62/TO-243) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBSS305PX [1] For further information and the availability of packing methods, see PBSS305PX_2 Product data sheet ...

  • Page 11

    ... NXP Semiconductors 11. Soldering 0.85 1.20 4.60 1.20 SOT89 standard mounting conditions for reflow soldering Fig 16. Reflow soldering footprint Not recommended for wave soldering Fig 17. Wave soldering footprint PBSS305PX_2 Product data sheet 4.75 2.25 2.00 1.90 1.20 0.20 1. (3x) 3.70 3.95 6.60 2 ...

  • Page 12

    ... NXP Semiconductors 12. Mounting 40 mm 3.96 mm PCB thickness: FR4 PCB = 1.6 mm ceramic PCB = 0.635 mm Fig 18. FR4 PCB, standard footprint; ceramic PCB, Al footprint PBSS305PX_2 Product data sheet 1.6 mm 001aaa234 O , standard 2 3 Rev. 02 — 8 December 2009 PBSS305PX 80 V, 4.0 A PNP low V (BISS) transistor ...

  • Page 13

    ... Revision history Document ID Release date PBSS305PX_2 20091208 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 15 “Package outline SOT89 • Figure 16 “Reflow soldering • ...

  • Page 14

    ... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

  • Page 15

    ... NXP Semiconductors 16. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering ...