PBSS305PX,115 NXP Semiconductors, PBSS305PX,115 Datasheet - Page 8

• Manufacturer Part Number: PBSS305PX,115
• Description: TRANS PNP 80V 4A SOT-89
• Manufacturer: NXP Semiconductors

Specifications of PBSS305PX,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 420mV @ 235mA, 4.7A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 2100 mW
• Maximum Operating Frequency: 100 MHz (Typ)
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4178-2; 934059018115; PBSS305PX T/R; PBSS305PX T/R

NXP Semiconductors
PBSS305PX_2
Product data sheet
Fig 9.
Fig 11. Collector-emitter saturation resistance as a
V
R
CEsat
−10
−10
CEsat
(V)
(Ω)
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
−10
10
10
−1
10
−1
−2
−1
−2
−10
−10
3
2
1
I
Collector-emitter saturation voltage as a
function of collector current; typical values
I
function of collector current; typical values
C
C
−1
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
−1
−1
−10
−10
(1)
(2)
(3)
−10
−10
2
2
−10
−10
(1)
(2)
(3)
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3
I
3
I
C
C
(mA)
(mA)
Rev. 02 — 8 December 2009
−10
−10
4
4
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
R
V
−10
−10
−10
CEsat
CEsat
(Ω)
(V)
(1) I
(2) I
(3) I
10
10
(1) I
(2) I
(3) I
−10
10
10
−1
10
−1
−2
−3
−1
−2
−10
−10
1
3
2
T
function of collector current; typical values
T
function of collector current; typical values
80 V, 4.0 A PNP low V
C
C
C
C
C
C
−1
−1
amb
amb
/I
/I
/I
/I
/I
/I
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
−1
−1
−10
−10
(1)
(2)
(3)
−10
−10
PBSS305PX
2
2
CEsat
(1)
(2)
(3)
−10
−10
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
006aaa632
006aaa636
3
I
3
I
C
C
(mA)
(mA)
−10
−10
4
4
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