MJD122T4 STMicroelectronics, MJD122T4 Datasheet

TRANS DARL NPN 100V 5A DPAK

MJD122T4

Manufacturer Part Number
MJD122T4
Description
TRANS DARL NPN 100V 5A DPAK
Manufacturer
STMicroelectronics
Type
Amplifier, Powerr
Datasheets

Specifications of MJD122T4

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
4V @ 80mA, 8A
Current - Collector Cutoff (max)
10µA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 4A, 4V
Power - Max
20W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
100 V
Maximum Dc Collector Current
5 A
Maximum Collector Cut-off Current
10 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Current, Gain
100
Current, Input
0.12 A
Current, Output
8 A
Package Type
TO-252
Polarity
NPN
Power Dissipation
20 W
Voltage, Collector To Emitter, Saturation
4 V
Voltage, Input
5 V
Voltage, Output
100 V
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage
100V
Emitter-base Voltage
5V
Base-emitter Saturation Voltage (max)
4.5V
Collector-emitter Saturation Voltage
2V
Collector Current (dc) (max)
16A
Dc Current Gain
100
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2469-2

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Features
Applications
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
performance coupled with very low saturation
voltage.
Table 1.
April 2009
Low collector-emitter saturation voltage
Integrated antiparallel collector-emitter diode
General purpose linear and switching
Order codes
MJD122T4
MJD127T4
Device summary
Marking
MJD122
MJD127
Complementary power Darlington transistors
Doc ID 3541 Rev 11
Polarity
NPN
PNP
Figure 1.
NPN: R
R
1
2
= 7 KΩ
= 70 Ω
Internal schematic diagrams
Package
DPAK
DPAK
PNP: R
1
3
MJD122
MJD127
Tape and reel
R
Packaging
1
2
= 16 KΩ
= 60 Ω
www.st.com
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MJD122T4 Summary of contents

Page 1

... Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order codes Marking MJD122T4 MJD122 MJD127T4 MJD127 April 2009 Complementary power Darlington transistors Figure 1. NPN ...

Page 2

Content Content 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

MJD122, MJD127 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Collector-base voltage (I CBO V Collector-emitter voltage (I CEO V Emitter-base voltage (I EBO I Collector current C I Collector peak current CM I Base current B P ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C; unless otherwise specified) case Table 4. Electrical characteristics Symbol Collector cut-off current I CBO ( Collector cut-off current I CEO ( Emitter cut-off current I ...

Page 5

MJD122, MJD127 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. DC current gain for NPN type h FE 1000 100 0.01 0.1 Figure 6. Collector-emitter saturation voltage for NPN type V ...

Page 6

Electrical characteristics Figure 8. Base-emitter saturation voltage for NPN type V BE(sat) ( 250 FE 2.0 1.5 1.0 0.5 0.1 1 Figure 10. Base-emitter on voltage for NPN type V BE(on) ( 2.0 ...

Page 7

MJD122, MJD127 Figure 14. Resistive load switching times for NPN type (off) t(ns =250 Vbeoff 1000 Ibon= - Iboff 100 Figure 16. Capacitances for NPN type ...

Page 8

Test circuits 3 Test circuits Figure 18. Resistive load switching for NPN type 1. Fast electronic switch 2. Non-inductive resistor Figure 19. Resistive load switching for PNP type 1. Fast electronic switch 2. Non-inductive resistor 8/12 Doc ID 3541 Rev ...

Page 9

MJD122, MJD127 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ...

Page 10

Package mechanical data DIM 10/12 TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 ...

Page 11

MJD122, MJD127 5 Revision history Table 5. Document revision history Date 01-Aug-2002 01-Oct-2007 03-Oct-2007 21-Apr-2009 Revision 8 9 Collector current limits have been improved 10 Package mechanical data updated The device MJD127 has been inserted 11 Section 2.1: Electrical characteristics ...

Page 12

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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