MJE350 STMicroelectronics, MJE350 Datasheet

TRANSISTOR PNP 300V 0.5A SOT-32

MJE350

Manufacturer Part Number
MJE350
Description
TRANSISTOR PNP 300V 0.5A SOT-32
Manufacturer
STMicroelectronics
Type
Switch, Powerr
Datasheets

Specifications of MJE350

Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
300V
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 50mA, 10V
Power - Max
20.8W
Mounting Type
Through Hole
Package / Case
TO-126-3
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
3 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
20.8 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
0.5 A
Dc Collector/base Gain Hfe Min
30
Current, Collector
-0.5 A
Current, Gain
240
Package Type
SOT-32
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
6 °C/W
Voltage, Breakdown, Collector To Emitter
-300 V
Voltage, Collector To Emitter
-300 V
Voltage, Emitter To Base
-3 V
Number Of Elements
1
Collector-emitter Voltage
300V
Collector-base Voltage
300V
Emitter-base Voltage
3V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
30
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Vce Saturation (max) @ Ib, Ic
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2630-5

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APPLICATIONS
DESCRIPTION
The MJE340 is a Silicon Epitaxial Planar NPN
transistor intended for use in medium power
linear and switching applications. It is mounted in
SOT-32.
The complementary PNP type is MJE350.
ABSOLUTE MAXIMUM RATINGS
For PNP types voltage and current values are negative.
April 2003
Symbol
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
V
V
T
P
CEO
EBO
I
T
stg
C
tot
j
COMPLEMETARY SILICON POWER TRANSISTORS
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Total Power Dissipation at T
Storage Temperature
Max Operating Junction Temperature
®
Parameter
C
= 0)
B
case
= 0)
25
o
C
INTERNAL SCHEMATIC DIAGRAM
NPN
PNP
SOT-32
-65 to 150
MJE340
MJE350
Value
20.8
300
150
0.5
3
3
2
MJE340
MJE350
1
Unit
o
o
W
V
V
A
C
C
1/5

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MJE350 Summary of contents

Page 1

... APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a Silicon Epitaxial Planar NPN transistor intended for use in medium power linear and switching applications mounted in SOT-32. The complementary PNP type is MJE350. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Emitter Voltage (I CEO V Emitter-Base Voltage (I ...

Page 2

... MJE340 / MJE350 THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Current Gain h FE Pulsed: Pulse duration = 300 s, duty cycle Safe Operating Area 2/5 Max unless otherwise specified) ...

Page 3

... DC Current Gain (NPN type) Collector-Emitter Saturation Voltage (NPN type) MJE340 / MJE350 DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (PNP type) 3/5 ...

Page 4

... MJE340 / MJE350 DIM. MIN. A 7.4 B 10.5 b 0.7 b1 0.40 C 2.4 c1 1 4/5 SOT-32 (TO-126) MECHANICAL DATA mm TYP. MAX. 7.8 10.8 0.9 0.65 2.7 1.3 16.0 2.2 4.4 3.8 3.2 2.54 2.15 1.27 0 inch MIN. TYP. MAX. 0.291 0.307 0.413 0.425 0.028 ...

Page 5

... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. STMicroelectronics GROUP OF COMPANIES http://www.st.com MJE340 / MJE350 5/5 ...

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