TRANSISTOR PNP 300V 0.5A SOT-32

MJE350

Manufacturer Part NumberMJE350
DescriptionTRANSISTOR PNP 300V 0.5A SOT-32
ManufacturerSTMicroelectronics
TypeSwitch, Power
MJE350 datasheets
 

Specifications of MJE350

Transistor TypePNPCurrent - Collector (ic) (max)500mA
Voltage - Collector Emitter Breakdown (max)300VDc Current Gain (hfe) (min) @ Ic, Vce30 @ 50mA, 10V
Power - Max20.8WMounting TypeThrough Hole
Package / CaseTO-126-3Transistor PolarityPNP
Mounting StyleSMD/SMTCollector- Emitter Voltage Vceo Max300 V
Emitter- Base Voltage Vebo3 VMaximum Dc Collector Current0.5 A
Power Dissipation20.8 WMaximum Operating Temperature+ 150 C
Continuous Collector Current0.5 ADc Collector/base Gain Hfe Min30
Current, Collector-0.5 ACurrent, Gain240
Package TypeSOT-32PolarityPNP
Primary TypeSiResistance, Thermal, Junction To Case6 °C/W
Voltage, Breakdown, Collector To Emitter-300 VVoltage, Collector To Emitter-300 V
Voltage, Emitter To Base-3 VNumber Of Elements1
Collector-emitter Voltage300VCollector-base Voltage300V
Emitter-base Voltage3VCollector Current (dc) (max)500mA
Dc Current Gain (min)30Operating Temp Range-65C to 150C
Operating Temperature ClassificationMilitaryMountingThrough Hole
Pin Count3 +TabLead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-Frequency - Transition-
Vce Saturation (max) @ Ib, Ic-Other names497-2630-5
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COMPLEMETARY SILICON POWER TRANSISTORS
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The MJE340 is a Silicon Epitaxial Planar NPN
transistor intended for use in medium power
linear and switching applications. It is mounted in
SOT-32.
The complementary PNP type is MJE350.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Emitter Voltage (I
CEO
V
Emitter-Base Voltage (I
EBO
I
Collector Current
C
P
Total Power Dissipation at T
tot
T
Storage Temperature
stg
T
Max Operating Junction Temperature
j
For PNP types voltage and current values are negative.
April 2003
INTERNAL SCHEMATIC DIAGRAM
NPN
PNP
= 0)
B
= 0)
C
o
25
C
case
MJE340
MJE350
1
2
3
SOT-32
Value
Unit
MJE340
MJE350
300
V
3
V
0.5
A
20.8
W
o
-65 to 150
C
o
150
C
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MJE350 Summary of contents

  • Page 1

    ... APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a Silicon Epitaxial Planar NPN transistor intended for use in medium power linear and switching applications mounted in SOT-32. The complementary PNP type is MJE350. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Emitter Voltage (I CEO V Emitter-Base Voltage (I ...

  • Page 2

    ... MJE340 / MJE350 THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Current Gain h FE Pulsed: Pulse duration = 300 s, duty cycle Safe Operating Area 2/5 Max unless otherwise specified) ...

  • Page 3

    ... DC Current Gain (NPN type) Collector-Emitter Saturation Voltage (NPN type) MJE340 / MJE350 DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (PNP type) 3/5 ...

  • Page 4

    ... MJE340 / MJE350 DIM. MIN. A 7.4 B 10.5 b 0.7 b1 0.40 C 2.4 c1 1 4/5 SOT-32 (TO-126) MECHANICAL DATA mm TYP. MAX. 7.8 10.8 0.9 0.65 2.7 1.3 16.0 2.2 4.4 3.8 3.2 2.54 2.15 1.27 0 inch MIN. TYP. MAX. 0.291 0.307 0.413 0.425 0.028 ...

  • Page 5

    ... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. STMicroelectronics GROUP OF COMPANIES http://www.st.com MJE340 / MJE350 5/5 ...