TRANSISTOR NPN 40V 4A SOT-32

MJE521

Manufacturer Part NumberMJE521
DescriptionTRANSISTOR NPN 40V 4A SOT-32
ManufacturerSTMicroelectronics
MJE521 datasheet
 

Specifications of MJE521

Transistor TypeNPNCurrent - Collector (ic) (max)4A
Voltage - Collector Emitter Breakdown (max)40VDc Current Gain (hfe) (min) @ Ic, Vce40 @ 1A, 1V
Power - Max40WMounting TypeThrough Hole
Package / CaseTO-126-3Transistor PolarityNPN
Mounting StyleSMD/SMTCollector- Emitter Voltage Vceo Max40 V
Emitter- Base Voltage Vebo4 VMaximum Dc Collector Current4 A
Power Dissipation40 WMaximum Operating Temperature+ 150 C
Continuous Collector Current4 ADc Collector/base Gain Hfe Min40
Lead Free Status / RoHS StatusLead free / RoHS CompliantCurrent - Collector Cutoff (max)-
Frequency - Transition-Vce Saturation (max) @ Ib, Ic-
Other names497-2583-5  
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STMicroelectronics PREFERRED
SALESTYPE
DESCRIPTION
The MJE521 is a silicon Epitaxial-Base NPN
transistor in Jedec SOT-32 plastic package.
It is intended for use in 5 to 20W audio amplifiers,
general purpose amplifier and switching circuits.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Base Voltage (I
CBO
V
Collector-Emitter Voltage (I
CEO
V
Emitter-Base Voltage (I
EBO
I
Collector Current
C
I
Collector Peak Current (t
CM
I
Base Current
B
P
Total Dissipation at Tc
tot
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
September 2003
SILICON NPN TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
= 0)
E
= 0)
B
= 0)
C
< 5 ms)
p
o
25
C
MJE521
1
2
3
SOT-32
Value
Unit
40
V
40
V
4
V
4
A
8
A
2
A
40
W
o
-65 to 150
C
o
150
C
1/4

MJE521 Summary of contents

  • Page 1

    ... STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJE521 is a silicon Epitaxial-Base NPN transistor in Jedec SOT-32 plastic package intended for use 20W audio amplifiers, general purpose amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Base Voltage (I CBO V Collector-Emitter Voltage (I CEO V Emitter-Base Voltage (I ...

  • Page 2

    ... MJE521 THERMAL DATA R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Current Gain h FE Pulsed: Pulse duration = 300 s, duty cycle 2/4 Max unless otherwise specified) case Test Conditions 0.1 A ...

  • Page 3

    ... TYP. 7.8 0.291 10.8 0.413 0.9 0.028 0.65 0.015 2.7 0.094 1.3 0.039 16.0 0.606 0.087 0.173 0.150 3.2 0.118 2.54 0.084 0.05 0.011 o 10 MJE521 MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 0.126 0.100 1: Base 2: Collector 3: Emitter 0016114/B 3/4 ...

  • Page 4

    ... MJE521 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...