MJE521 STMicroelectronics, MJE521 Datasheet

TRANSISTOR NPN 40V 4A SOT-32

MJE521

Manufacturer Part Number
MJE521
Description
TRANSISTOR NPN 40V 4A SOT-32
Manufacturer
STMicroelectronics
Datasheet

Specifications of MJE521

Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
40V
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 1A, 1V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-126-3
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
4 V
Maximum Dc Collector Current
4 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
4 A
Dc Collector/base Gain Hfe Min
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Vce Saturation (max) @ Ib, Ic
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2583-5
DESCRIPTION
The MJE521 is a silicon Epitaxial-Base NPN
transistor in Jedec SOT-32 plastic package.
It is intended for use in 5 to 20W audio amplifiers,
general purpose amplifier and switching circuits.
ABSOLUTE MAXIMUM RATINGS
September 2003
Symbol
STMicroelectronics PREFERRED
SALESTYPE
V
V
V
T
P
I
CBO
CEO
EBO
I
CM
T
I
stg
C
B
tot
j
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Total Dissipation at Tc
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
C
p
25
E
= 0)
< 5 ms)
= 0)
B
o
= 0)
C
SILICON NPN TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
SOT-32
150
40
40
40
4
4
8
2
3
2
MJE521
1
Unit
o
o
W
V
V
V
A
A
A
C
C
1/4

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MJE521 Summary of contents

Page 1

... STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJE521 is a silicon Epitaxial-Base NPN transistor in Jedec SOT-32 plastic package intended for use 20W audio amplifiers, general purpose amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Base Voltage (I CBO V Collector-Emitter Voltage (I CEO V Emitter-Base Voltage (I ...

Page 2

... MJE521 THERMAL DATA R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Current Gain h FE Pulsed: Pulse duration = 300 s, duty cycle 2/4 Max unless otherwise specified) case Test Conditions 0.1 A ...

Page 3

... TYP. 7.8 0.291 10.8 0.413 0.9 0.028 0.65 0.015 2.7 0.094 1.3 0.039 16.0 0.606 0.087 0.173 0.150 3.2 0.118 2.54 0.084 0.05 0.011 o 10 MJE521 MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 0.126 0.100 1: Base 2: Collector 3: Emitter 0016114/B 3/4 ...

Page 4

... MJE521 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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